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PDF VLA567-01R Data sheet ( Hoja de datos )

Número de pieza VLA567-01R
Descripción DRIVER FOR IGBT MODULES
Fabricantes Isahaya Electronics 
Logotipo Isahaya Electronics Logotipo



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DESCRIPTION
VLA567-01R is the hybrid integrated circuit of 2ch IGBT drivers.
This device include the isolated type DC-DC converter for
Gate drive. Therefore design of the gate power supply is not
required.
The system of built-in short circuit protection provide a margin
to time by function to maintain reverse bias for a predetermined
time after the detection of short circuit.
Recommended IGBT modules:
VCES = 600V series up to 600A class
VCES = 1200V series up to 600A class
(Please keep the condition not to deviate from the recommended
range of electrical characteristics and maximum rating. )
FEATURES
Low height, DIP structure
Built in the isolated DC-DC converter for gate drive
Output peak current is +/-8A(max)
Built in short circuit protection
Electrical isolation voltage is 2500Vrms (for 1 minute)
CMOS compatible input interface
Adjustable fall time on activity of short circuit protection.
HYBRID IC
VLA567-01R
DRIVER FOR IGBT MODULES
OUTLINE DRAWING
62.0max
Dimensions: mm
44 23
1
2.54
22
0.5+/-0.1
APPLICATIONS
To drive IGBT modules for inverter or AC servo systems application
BLOCK DIAGRAM
VI+1 40
1kohm
240ohm
VI1 41
TEST2 42
VD 44
PC
Gi 43
TEST1 1
VI+2 4
1kohm
240ohm
VI2 5
N.C 2
3
PC
TIMER&
RESET
LATCH DETECT
INTERFACE
GATE SHUT DOWN 
VCC1
UVL
VEE1
VCC2
UVL
VEE2
TIMER&
RESET
LATCH DETECT
INTERFACE
GATE SHUT DOWN 
25 VCC1
23 DETECT1
24 Ctrip1
26 Vo1
28 E1
29 Fo1
30 Cs1
27 VEE1
31 N.C
14 N.C
20 VCC2
22 DETECT2
21 Ctrip2
19 Vo2
17 E2
16 Fo2
15 Cs2
18 VEE2
1

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VLA567-01R pdf
DEFFINITION OF CHARACTERISTICS
(1)SWITCHING OPERATION
VI
HYBRID IC
VLA567-01R
DRIVER FOR IGBT MODULES
(2)OPERATION OF SHORT CIRCUIT PROTECTION
VI 0V
VO tr
tPLH
tf
tPHL
90%
50%
10%
VO 0V
-5V
Fo
0V
ttrip1,2
ttimer
10V
10V
APPLICATION EXAMPLE
VIN : 5V
Gate signal 1
VD : 15V
HC04 etc.
GND
Gate signal 2
HC04 etc.
GND
40
41
42
44
43 VLA56701R
1
4
5
4.7kohm
29
23 4.7kohm
RG1
26
25 +
C1
28
+
C2
27
Ctrip1
24
30
DZ1
Cs1
PC1
D1
22
RG2
19
D2
20 +
C3
17
+
C4
18
Ctrip2
21
15
DZ4
Cs2
4.7kohm
DZ2,3
DZ5,6
P
IGBT
module
N
16
PRECAUTION
4.7kohm
PC2
(1) Voltage compensate capacitors are expected to be located as close as
possible from the hybrid IC.
VD=15V +/-5%
VIN= 5V +/-5%
(2) D1 requires approximately the same voltage of power modules.
C1 ~ 4=100μF 50V(Low impedance)
(3) If reverse recovery time of D1 (D2) is long, pin23 (pin22) is applied high voltage.
In that case, counterplan for protection which insert zener diode between
pin 18 and 22 (pin 27 and 23) is necessary like above diagram.
(4) In case pin 21 or 24 are operating, the Ctrip is expected to be wired as close as
possible from pin. (Less than 5cm coming and going)
In case of not operating, please pin 21 or 24 are open.
(5) Minimize the area of closed circuit of gate circuit and input gate signal circuit
so as not to be affected by induction noise.
(6) When the built in short-circuit protection circuit need not be used,
Ctrip1,2 : Depended on RG1,2
(Please refer to the
“ ttrip-Ctrip CHARACTERISTICS “ in page3)
Cs1,2 : Please refer to the
“ ts-Cs CHARACTERISTICS “ in page6)
Z1,4 : 30V
DZ2,3,5,6 : 18V
D1,2 : First recovery diode( trr : 0.2μs max )
RP1H(Sanken) etc.
PC1,2:TLP785(TOSHIBA) etc.
please connect resistance of 4.7k ohm between pin 17 and 22 (pin 23 and 28).
At that time, D1 (D2) and Dz1 (DZ4) are not require, and pin 16 and 29 are not
necessary to be connected.
(7) Pin 1 and 42 are for test pin, so pin 1 and 42 are not to be connected electrically to other line.
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