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PDF VLA552-01R Data sheet ( Hoja de datos )
| Número de pieza | VLA552-01R | |
| Descripción | DRIVER FOR IGBT MODULES | |
| Fabricantes | Isahaya Electronics | |
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DESCRIPTION
VLA552-01R is a hybrid integrated circuit designed for driving
n-channel IGBT modules in any gate-amplifier application.
OUTLINE DRAWING
Electrical isolation voltage between input and output is 4000Vrms
(for 1minute).This device include the isolated type DC-DC
88.0 MAX
converter for a Gate drive. Therefore design of the gate
power supply is not required.
The system of built-in short circuit protection provide a margin
to time by function to maintain reverse bias for a predetermined
time after the detection of short circuit.
Recommended IGBT modules:
VCES = 1200V series up to 3600A class
VCES = 1700V series up to 3600A class
FEATURES
•Built-in the isolated type DC-DC converter for gate drive
•SIP outline allows more space on mother board
2.54
8.0 MAX
1
0.75 +/-0.1
•Built-in short circuit protection (With a pin for fault output)
•Possible to assist collector clamp circuit
•Variable fall time on activity of short circuit protection
•Electrical isolation voltage between input and output is 4000Vrms (for 1minute)
•CMOS compatible input.
APPLICATIONS
To drive IGBT modules for general industrial use apparatus.
BLOCK DIAGRAM
HYBRID IC
VLA552-01R
DRIVER FOR IGBT MODULES
Dimensions : mm
8.0MAX
6.0MAX
30
0.7MAX
11.5MAX
17.0MAX
1
VD 2
Gi 3
4
120
VI+ 6
1k
VI- 7
120
REGULATOR
LATCH
DETECT
CIRCUIT
IINNTTEERRFFAACCEE
TIMER
&RESET
CIRCUIT
GATE SHUT-
DOWN CIRCUIT
5,17,18 pin : N.C.
19 Vcc
29
ttrip
CONTROL
30
DETECT
PIN
20 GND
26
COLLECTOR CLAMP
ASSIST
25 Vcc
23 Vo
24
27
SHUT-DOWN
SPEED CONTROL
28
FAULT
OUTPUT
21 VEE
22
1 page  
DEFINITION OF CHARACTERISTICS
(1)SWITCHING OPERATION
VI
HYBRID IC
VLA552-01R
DRIVER FOR IGBT MODULES
(2)OPERATION OF SHORT CIRCUIT PROTECTION
VI 0V
VO tr
tPLH
tf
tPHL
1920.%5V
0V
-5V
VO 0V
-5V
Pin 28 output
0V
ttrip1,2
ttimer
10V
10V
APPLICATION EXAMPLE
1
2
VD
3
4
RC filter
~10us
Error signal
Control signal
PC1
4.7k
VIN
6
7
HC04 etc.
VD=15V +/‐5%
VIN=5V +/‐5%
PC1 : TLP781 (TOSHIBA) etc.
Ctrip : Depend on RG
Cs : Depend on surge voltage
Dz1 : 30V, 0.5W~1W
Dz2 : 18V, Bidirectional
D1 : Fast recovery diode (trr : 200ns Max)
RP1H(SanKen) etc.
C1,C2 : 470uF, 35V(Low impedance)
VLA552
30
D1 C
This circuit must be close to
Collector and Gate.
26 Collector
clamp circuit
23
24
RG D2
G IGBT module
25 + C1 Dz2
20 + C2
22 Dz1
C
21
Ctrip
29
27 Cs
19 or 25pin
4.7k
28
4.7k
Dz3~6
D4
26pin
PC1 R2
R1
D3
G
D2~4 : SBD VRM=60V, IFSM>60A class
R1 : 1 ohm, 1W class
R2 : 10ohm,1/4W class
Dz3~6 : Vpn < Total Vz < VCES of IGBT
Rough guide of total Vz is as follows
For VCES 1200V series 900~1000V
For VCES 1700V series 1300~1400V
It depends on Vpn, IC(max), RG, snubber circuit,
Inductance of power main circuit, and kind
of main condenser.
PRECAUTION
(1) Voltage compensate capacitors are expected to be located as close as possible to the Hybrid IC.
(2) Minimize the area of closed circuit of gate circuit so as not to be affected by induction noise.
(3) D1 requires approximately the same voltage of IGBT modules.
(4) When recovery current flow in D1 , pin 30 is applied high voltage .
In that case , counterplan for protection which insert a zener diode between pin21 and 30 are necessary like above diagram.
(5) When you make late speed of reverse bias at the time of short circuit protection operation,
please adjust and connect a capacitor between pin 21 and 27.
(6) When the built in short-circuit protection circuit need not be used, please connect resistance of 4.7k ohm between pin 30 and 20.
(D1 and Dz1 are not required.)
(7) When the collector clamp circuit operates repeatedly, it may be destroied for heat. That is why the confirmation of calorific value
is necessary for zener diode by actual inverter test.
5
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet VLA552-01R.PDF ] | |
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