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PDF BD635 Data sheet ( Hoja de datos )
| Número de pieza | BD635 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD635
DESCRIPTION
·DC Current Gain -
: hFE = 40(Min.)@ IC= 25mA
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.)
·Complement to Type BD636
APPLICATIONS
·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60 V
VCEO
Collector-Emitter Voltage
60 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
2A
ICM Collector Current-Peak
5A
IBB Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
0.3 A
2
W
30
150 ℃
-55~150
℃
isc Website：www.iscsemi.cn
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BD635.PDF ] | |
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