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PDF BD233 Data sheet ( Hoja de datos )
| Número de pieza | BD233 | |
| Descripción | EPITAXIAL SILICON POWER TRANSISTORS | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BD233 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
EPITAXIAL SILICON POWER TRANSISTORS
ECB
BD233
BD235
BD237
NPN
BD234
BD236
BD238
PNP
TO126
Plastic Package
Intended for use in Medium Power Linear Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Collector Emitter Voltage (RBE=1KΩ)
Emitter Base Voltage
Collector Current
Collector Peak Current
Total Dissipation @ TC=25ºC
Total Dissipation @ Ta=25ºC
Derate above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VCER
VEBO
IC
ICM
PD
PD
Tj, Tstg
BD233
BD234
45
45
45
BD235
BD236
60
60
60
5.0
2.0
6.0
25
1.25
10
BD237
BD238
100
80
100
- 65 to +150
UNIT
V
V
V
V
A
A
W
W
mW/ ºC
ºC
THERMAL CHARACTERISTICS
Junction to Case
Junction to Ambient in free air
Rth (j-c)
Rth (j-a)
5.0 ºC/W
100 ºC/W
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Cut off Current
ICBO VCB=45V, IE=0 BD233/234
VCB=60V, IE=0 BD235/236
VCB=100V, IE=0 BD237/238
MIN
Emitter Cut off Current
Collector Emitter Sustaining Voltage
Collector Emitter Saturation Voltage
Base Emitter Voltage
IEBO
*VCEO (sus)
*VCE (sat)
*VBE (on)
TC = 150ºC
VCB=45V, IE=0 BD233/234
VCB=60V, IE=0 BD235/236
VCB=100V, IE=0 BD237/238
VEB=5V, IC=0
IC=0.1A, IB=0 BD233/234
BD235/236
BD237/238
IC=1.0A, IB=0.1A
IC=1.0A, VCE=2V
45
60
80
TYP MAX
100
100
100
UNIT
µA
µA
µA
2.0 mA
2.0 mA
2.0 mA
1.0 mA
V
V
V
0.6 V
1.3 V
Continental Device India Limited
Data Sheet
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BD233.PDF ] | |
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