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PDF AUIRF7316Q Data sheet ( Hoja de datos )
| Número de pieza | AUIRF7316Q | |
| Descripción | Dual P Channel MOSFET | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AUIRF7316Q (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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AUTOMOTIVE GRADE
AUIRF7316Q
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free, RoHS Compliant
Automotive Qualified *
S1
G1
S2
G2
Description
Specifically designed for Automotive applications, these HEXFET®
Power MOSFET's in a Dual SO-8 package utilize the lastest
processing techniques to achieve extremely low on-resistance per
silicon area. Additional features of these Automotive qualified
HEXFET Power MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a
wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
1 8 D1
2 7 D1
3 6 D2
4 5 D2
Top View
G
Gate
VDSS
RDS(on) typ.
max.
ID
SO-8
AUIRF7316Q
D
Drain
-30V
0.042
0.058
-4.9A
S
Source
Base part number
AUIRF7316Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7316QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
IS
PD @TA = 25°C
PD @TA = 70°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
-30
-4.9
-3.9
-30
-2.5
2.0
1.3
± 20
140
-2.8
0.20
-5.0
-55 to + 150
Units
V
A
W
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
RJA Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
Typ.
–––
Max.
62.5
Units
°C/W
1 2015-9-30
1 page  
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
AUIRF7316Q
20 ID = -4.9A
16
VDS =-15V
12
8
4
0
0 10 20 30
QG, Total Gate Charge (nC)
40
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x ZthJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 2015-9-30
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AUIRF7316Q.PDF ] | |
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