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PDF AUIRF7319Q Data sheet ( Hoja de datos )
| Número de pieza | AUIRF7319Q | |
| Descripción | Dual N and P Channel MOSFET | |
| Fabricantes | Infineon | |
| Logotipo |  |
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AUTOMOTIVE GRADE
AUIRF7319Q
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Surface Mount
Fully Avalanche Rated
Lead-Free, RoHS Compliant
Automotive Qualified *
N-CHANNEL MOSFET
N-CH P-CH
S1 1
G1 2
8 D1
7 D1
VDSS
30V -30V
S2 3
6 D2 RDS(on) typ. 0.023 0.042
G2 4
5 D2
max. 0.029 0.058
P-CHANNEL MOSFET
ID
6.5A -4.9A
Top View
Description
Specifically designed for Automotive applications, these HEXFET®
Power MOSFET's in a Dual SO-8 package utilize the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of these Automotive qualified HEXFET Power
MOSFET's are a 150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
G
Gate
Base part number
AUIRF7319Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
SO-8
AUIRF7319Q
D
Drain
S
Source
Orderable Part Number
AUIRF7319QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
IS
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
EAR
VGS
dv/dt
TJ
TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
N-Channel
30
P-Channel
-30
6.5 -4.9
5.2 -3.9
30 -30
2.5 -2.5
2.0
1.3
82 140
4.0 -2.8
0.20
± 20
5.0 -5.0
-55 to + 150
Units
V
A
W
mJ
A
mJ
V
V/ns
°C
Thermal Resistance
Symbol
Parameter
RJA Junction-to-Ambient ( PCB Mount, steady state)
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
Max.
62.5
Units
°C/W
2015-9-30
1 page  
N-Channel
AUIRF7319Q
1200
900
600
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
300 Crss
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 5.8A
16
VDS = 15V
12
8
4
0
0 10 20 30 40
QG, Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
5
100
0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x ZthJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
2015-9-30
5 Page 
AUIRF7319Q
Qualification Information
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
SO-8
MSL1
Class M2 (+/- 200V)†
AEC-Q101-002
Class H1A (+/- 500V)†
AEC-Q101-001
Class C5 (+/- 2000V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
3/4/2014
9/30/2015
Comments
Added "Logic Level Gate Drive" bullet in the features section on page 1
Updated data sheet with new IR corporate template
Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
11
2015-9-30
11 Page | ||
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| PDF Descargar | [ Datasheet AUIRF7319Q.PDF ] | |
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