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Número de pieza | AUIRF7342Q | |
Descripción | Dual P Channel MOSFET | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AUIRF7342Q (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! AUTOMOTIVE GRADE
AUIRF7342Q
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual P Channel MOSFET
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free, RoHS Compliant
Automotive Qualified *
S1
G1
S2
G2
1
2
3
4
8 D1
7 D1
6 D2
5 D2
Top View
VDSS
RDS(on) max.
ID
Description
Specifically designed for Automotive applications, this cellular design of
HEXFET® Power MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This benefit combined
with the fast switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.
SO-8
AUIRF7342Q
G
Gate
D
Drain
-55V
0.105
-3.4A
S
Source
Base part number
AUIRF7342Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7342QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
VDS
Parameter
Drain-Source Voltage
Max.
-55
Units
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
VGSM
EAS
dv/dt
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Dearating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp < 10µs
Single Pulse Avalanche Energy (Thermally Limited)
Peak Diode Recovery dv/dt
-3.4
-2.7
-27
2.0
1.3
0.016
± 20
30
114
5.0
A
W
mW°/C
V
mJ
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Symbol
Parameter
RJA Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
Max.
62.5
Units
°C/W
2015-9-30
1 page 1200
960
720
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
480
240
0
1
Coss
Crss
10
-VDS , Drain-to-Source Voltage (V)
100
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
100
TJ = -40°C
TJ = 25°C
TJ = 150°C
10
VGS = 0V
1.0
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
-VSD, Source-to-Drain Voltage (V)
Fig. 11 Typical Source-Drain Diode
Forward Voltage
5
AUIRF7342Q
20 ID = -3.1A
16
VDS = -48V
VDS = -30V
VDS = -12V
12
8
4
0
0 10 20 30
QG, Total Gate Charge (nC)
40
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
10msec
100
-VDS , Drain-toSource Voltage (V)
Fig. 12 Maximum Safe Operating Area
2015-9-30
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet AUIRF7342Q.PDF ] |
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