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PDF TGA2578 Data sheet ( Hoja de datos )
| Número de pieza | TGA2578 | |
| Descripción | 30W Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TGA2578 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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Applications
Communications
Electronic Warfare
Test Instrumentation
EMC Amplifier
TGA2578
2-6GHz 30W Power Amplifier
Product Features
Frequency Range: 2 – 6 GHz
Psat: 45 dBm CW
PAE: 40% CW
Small Signal Gain: 27 dB
Input Return Loss: >20 dB
IM3: -30 dBc @ 40 dBm Pout/Tone
Bias: VD = 28 V, IDQ = 400 mA, VG = -2.8 V Typical
Chip Dimensions: 6.4 x 5.0 x 0.10 mm
Functional Block Diagram
23 4
5
1
6
10 9 8
7
General Description
TriQuint’s TGA2578 is a wideband power amplifier
fabricated on TriQuint’s 0.25um GaN on SiC process.
Operating from 2 to 6 GHz, it achieves 30 W saturated
output power with high efficiency of 40% PAE, and 27
dB small signal gain.
Fully matched to 50 ohms with integrated DC blocking
caps on both I/O ports, the TGA2578 is ideally suited to
support both commercial and defense related
applications.
The TGA2578 is 100% DC and RF tested on-wafer to
ensure compliance to power and PAE specifications.
Lead-free and RoHS compliant.
Pad Configuration
Pad No.
1
2, 10
3, 9
4, 8
5, 7
6
Symbol
RF In
VG1
VG2
VD1
VD2
RF Out
Ordering Information
Part
TGA2578
ECCN Description
3A001.b.2.a
2-6 GHz 30 W Power
Amplifier
Datasheet: Rev A 03-01-16
© 2013 TriQuint
- 1 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
Typical Performance
Output Power vs. Freq. vs. Input Power
52
Temp. = +25 °C
VD = 28 V, IDQ = 400 mA
48
44
40
36
32 23 dBm
20 dBm
28 10 dBm
24
20
2
3456
Frequency (GHz)
7
Gain vs. Frequency vs. Input Power
35
Temp. = +25 °C
VD = 28 V, IDQ = 400 mA
30
25
20 10 dBm
20 dBm
15 23 dBm
10
5
0
234567
Frequency (GHz)
PAE vs. Frequency vs. Input Power
60
Temp. = +25 °C
55
VD = 28 V, IDQ = 400 mA
50
45
40
35 23 dBm
30 20 dBm
25 10 dBm
20
15
10
5
0
234567
Frequency (GHz)
TGA2578
2-6GHz 30W Power Amplifier
Output Power vs. Input Power vs. Freq.
52
Temp. = +25 °C
VD = 28 V, IDQ = 400 mA
48
44
40
36
32
28
24
0
2 GHz
4 GHz
6 GHz
5 10 15 20
Input Power (dBm)
25
Gain vs. Input Power vs. Frequency
32
Temp. = +25 °C
VD = 28 V, IDQ = 400 mA
30
28
26
24 2 GHz
4 GHz
22 6 GHz
20
18
0
5 10 15 20
Input Power (dBm)
25
PAE vs. Input Power vs. Frequency
50
Temp. = +25 °C
VD = 28 V, IDQ = 400 mA
45
40
35
30
25
20 2 GHz
4 GHz
15 6 GHz
10
5
0
0 5 10 15 20 25
Input Power (dBm)
Datasheet: Rev A 03-01-16
© 2013 TriQuint
- 5 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
Mechanical Drawing
23 4
TGA2578
2-6GHz 30W Power Amplifier
5
16
10 9
8
7
Bond Pad
1
2, 10
3, 9
Symbol
RF In
VG1
VG2
Unit: millimeters
Thickness: 0.10
Die x, y size tolerance: +/- 0.050
Chip edge to bond pad dimensions are shown to center of pad
Ground is backside of die
Pad Size
0.100 x 0.200
0.100 x 0.100
0.100 x 0.100
Bond Pad
4, 8
5, 7
6
Symbol
VD1
VD2
RF Out
Pad Size
0.450 x 0.100
0.580 x 0.125
0.100 x 0.200
Datasheet: Rev A 03-01-16
© 2013 TriQuint
- 11 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet TGA2578.PDF ] | |
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