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PDF QPA1013D Data sheet ( Hoja de datos )
| Número de pieza | QPA1013D | |
| Descripción | 10W GaN Power Amplifier | |
| Fabricantes | TriQuint | |
| Logotipo |  |
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Applications
Test Instrumentation
Electronic Warfare (EW)
Radar
Communications
QPA1013D
6 – 18GHz 10W GaN Power Amplifier
Product Features
Frequency Range: 6 – 18GHz
POUT: >40dBm @ PIN = 20dBm
PAE: >20% @ PIN = 20dBm
Large Signal Gain: >20dB @ PIN = 20dBm
Small Signal Gain: >25dB
Return Loss: >6.5dB
Bias: VD = 20V, IDQ = 1250mA, VG = -2.4V Typical
Chip Dimensions: 5.05 x 3.55 x 0.10 mm
Functional Block Diagram
General Description
Qorvo’s QPA1013D is a broadband high power MMIC
amplifier fabricated on Qorvo’s production 0.15um GaN
on SiC process (QGAN15). The QPA1013D operates
from 6 – 18GHz and provides more than 10W saturated
output power with power-added efficiency >20% and
large-signal gain >20 dB. This combination of wideband
performance provides the flexibility designers are looking
for to improve system performance while reducing size
and cost.
The QPA1013D is matched to 50Ω with integrated DC
blocking capacitors on both RF I/O ports simplifying
system integration. The broadband performance makes it
ideally suited in support of test instrumentation and
electronic warfare, as well as, supporting multiple radar
and communication bands.
The QPA1013D is 100% DC and RF tested on-wafer to
ensure compliance to electrical specifications.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1
2, 12
3, 11
4, 10
5, 9
6, 8
7
Symbol
RF In
VG12
VD1
VD2
VG3
VD3
RF Out
Ordering Information
Part
QPA1013D
ECCN Description
3A001.b.2.c
6 – 18GHz 10W GaN
Power Amplifier
Datasheet: Rev B 03-28-16
© 2016 TriQuint
- 1 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
1 page  
Typical Performance (CW)
QPA1013D
6 – 18GHz 10W GaN Power Amplifier
POUT vs. Frequency vs. VD
45
44 Temp. = +25 C
CW
PIN = 20dBm
43
42
41
40
39 Vd=18V
38 Vd=20V
Vd=22V
37
36 IDQ = 1250 mA
35
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
PAE vs. Frequency vs. VD
40
Temp. = +25 C
35
CW
PIN = 20dBm
30
25
20
15 Vd=18V
Vd=20V
10 Vd=22V
5
IDQ = 1250 mA
0
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
Drain Current vs. Frequency vs. VD
4000
Temp. = +25 C
3500
CW
PIN = 20dBm
3000
2500
2000
1500
1000
Vd=18V
Vd=20V
Vd=22V
500
IDQ = 1250 mA
0
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
Gate Current vs. Frequency vs. VD
12
Temp. = +25 C
CW
PIN = 20dBm
10
8
6
4 IDQ = 1250 mA
2 Vd=18V Vd=20V Vd=22V
0
-2
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
45 POUT vs. Frequency vs. IDQ
44 Temp. = +25 C
CW
PIN = 20dBm
43
42
41
40
39 VD = 20 V
38 Idq=1000mA
37 Idq=1250mA
36 Idq=1500mA
35
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
PAE vs. Frequency vs. IDQ
40
Temp. = +25 C
35
CW
PIN = 20dBm
30
25
20
15
10
5 VD = 20 V
Idq=1000mA Idq=1250mA Idq=1500mA
0
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
Datasheet: Rev B 03-28-16
© 2016 TriQuint
- 5 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
5 Page 
Application Circuit
QPA1013D
6 – 18GHz 10W GaN Power Amplifier
Bias-up Procedure
1. Set ID limit to 4A, IG limit to 16mA
2. Set VG to -5.0V
3. Set VD +20V
4. Adjust VG more positive until IDQ = 1250mA (VG ~ -
2.4V Typical)
5. Apply RF signal
Bias-down Procedure
1. Turn off RF signal
2. Reduce VG to -5.0V. Ensure IDQ ~ 0mA
3. Set VD to 0V
4. Turn off VD supply
5. Turn off VG supply
Datasheet: Rev B 03-28-16
© 2016 TriQuint
- 11 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
11 Page | ||
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| PDF Descargar | [ Datasheet QPA1013D.PDF ] | |
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