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PDF CHM1080-98F Data sheet ( Hoja de datos )
| Número de pieza | CHM1080-98F | |
| Descripción | 71-86GHz Single Side Band Mixer | |
| Fabricantes | United Monolithic Semiconductors | |
| Logotipo |  |
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CHM1080-98F
71-86GHz Single Side Band Mixer
GaAs Monolithic Microwave IC
Description
The CHM1080-98F is a multifunction
monolithic mixer, which integrates a
balanced sub-harmonic cold FET mixer, with
a LO buffer. It is usable both for up-
conversion and down-conversion and also
compatible with Baseband configuration.
It is designed for the E-band
telecommunication application, particularly
well suited for the new generation of high
capacity backhaul.
The circuit is manufactured with a pHEMT
process, 0.10µm gate length.
It is available in chip form.
GX
D
G
LO_IN
RF
Q
I
Main Features
■ Broadband RF performances: 71-86GHz
■ -11dB Conversion Gain
■ 40dB 2LO isolation
■ 10dBm Input Power at 1dB compression
■ DC bias: Vd=3.5V @Id=90mA
■ Chip size 3.43x1.5x0.07mm
Conversion Gain
-5
-6
-7
-8
USB
LSB
-9
-10
-11
-12
-13
-14
-15
71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86
RF Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
FRF RF Frequency
FIF IF frequency
Gc Conversion gain
RFin P1dB RF input power @1dB comp.
Min Typ Max Unit
71 86 GHz
DC 12 GHz
-11 dB
10 dBm
Ref. : DSCHM10803329 - 25 Nov 13
1/16 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
1 page  
71-86GHz Single Side Band Mixer
CHM1080-98F
Typical on wafer Measurements as Down converter
Tamb.= +25°C, Vd = +3.5V
Image rejection versus RF Frequency & Mixer Voltage GX
40
38
36
LSB; GX= -2V
USB; GX= -2V
34
GX= -1.8V
GX= -1.8V
32
30
GX= -1.6V
GX=-1.6V
28
26
24
22
20
18
16
14
12
10
71 72 73 74 75 76 77 78 79 80 81 82 83 84 85
RF Frequency (GHz)
86
LO Isolation versus LO Frequency
50
45
40
35
30
25
20
15
10
5
0
35 36 37 38 39 40 41 42 43 44
LO Frequency (GHz)
Ref. : DSCHM10803329 - 25 Nov 13
5/16 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5 Page 
71-86GHz Single Side Band Mixer
CHM1080-98F
Typical on wafer Measurements in Baseband configuration
Tamb.= +25°C, Vd = +3.5V
Measure with low IF at 10MHz, with 90° between I and Q signal
GX= -2V, Pin_IF= -10dBm, Pin_LO= 2dBm
G tuned for Id_LO= 85mA ( G close to -2.2V)
Conversion Gain & Image Rejection versus RF Frequency
30
26
22
18
14
10
6
USB LSB Image rejection USB Image rejection LSB
2
-2
-6
-10
71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86
RF Frequency (GHz)
Isolation versus LO Frequency (1)
60
55
50
45
40
2LO/ RF without DC voltage
35
2LO/ RF with DC voltage
30
LO/ RF
25
20
15
10
5
0
35 36 37 38 39 40 41 42 43
LO Frequency (GHz)
(1) In baseband configuration, a DC voltage on I & Q could be applied to cancel the 2LO leakage.
V_ V_I & V_Q should be tuned independently for each frequency and temperature.
Ref. : DSCHM10803329 - 25 Nov 13
11/16
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet CHM1080-98F.PDF ] | |
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