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PDF CHK8015-99F Data sheet ( Hoja de datos )
| Número de pieza | CHK8015-99F | |
| Descripción | 16W Power Transistor | |
| Fabricantes | United Monolithic Semiconductors | |
| Logotipo |  |
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CHK8015-99F
16W Power Transistor
GaN HEMT on SiC
Description
The CHK8015-99F is a 16W Gallium Nitride
High Electron Mobility Transistor. This product
offers a general purpose and broadband
solution for a variety of RF power applications.
The circuit is manufactured with a 0.25µm gate
length GaN HEMT technology on SiC
substrate.
It is proposed in a bare die form and requires
an external matching circuitry.
Main Features
■ Wide band capability up to 18GHz
■ Pulsed and CW operating modes
■ GaN technology: High Pout & High PAE
■ DC bias: VD=30V @ID_Q=200mA
■ Chip size 0.88x2x0.1mm
■ RoHS N°2011/65
■ REACh N°1907/2006
Main Electrical Characteristics
Tref = +25°C, CW mode, Freq = 9GHz, VDS = 30V, ID_Q = 200mA
Symbol
Parameter
Min
GSS Small Signal Gain
PSAT
Saturated Output Power
PAE
Max Power Added Efficiency
GPAE_MAX Associated Gain at Max PAE
These values are deduced from elementary power cell performances
Typ
17
20
68
11
Max
Unit
dB
W
%
dB
Ref. : DSCHK80156315 - 10 Nov 16
1/8 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
1 page  
16W Power Transistor
CHK8015-99F
Elementary Cell Maximum Gain & Stability Characteristics
Tref = +25°C, VDS = +30V, ID_Q = 50mA, simulated results
35 7
30
MAG
25
6
5
20 4
15 3
10 2
5
K Factor
1
00
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Elementary Cell Load Pull Performances
Tref = +25°C, VDS = +30V, ID_Q = 50mA, simulated results
Zs Zl
The impedances are chosen as a trade-off between Output Power, PAE and Stability of the
device. Second harmonic of output load has been tuned.
These values are given in the bonding pads reference plan.
Frequency
(GHz)
3
6
9
12
15
18
Zs
15 + j18
8.2 + j14.8
2.8 + j6.4
2.1 + j3.5
1.87 + j0
1.7 – j3.1
Zl
60 + j65
24.8 + j51.7
11.7 + j33.7
8 + j24
5 + j17.3
4 + j12.7
Gain (dB)
@PAEmax
12.8
12.4
10.8
10
8.6
7.6
PAEmax
(%)
72
69
68
52
50
46
Pout (W)
@PAEmax
4.9
4.4
4.7
3.8
3.6
3.6
Poutmax
(W)
5.3
5
5.1
4.8
4.7
4.8
Ref. : DSCHK80156315 - 10 Nov 16
5/8 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet CHK8015-99F.PDF ] | |
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