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PDF CHA8610-99F Data sheet ( Hoja de datos )

Número de pieza CHA8610-99F
Descripción 15W X Band High Power Amplifier
Fabricantes United Monolithic Semiconductors 
Logotipo United Monolithic Semiconductors Logotipo



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CHA8610-99F
15W X Band High Power Amplifier
GaN Monolithic Microwave IC
Description
The CHA8610-99F is a two stage High
Power Amplifier operating between 8.5 and
11GHz and providing typically 15W of
saturated output power and 40% of power
added efficiency.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
In
V+
STG1 STG2
V-
Out
Main Features
Frequency range: 8.5-11GHz
High output power: 15W
High PAE: 40%
Linear Gain: 24dB
DC bias: Vd=30Volt @Id=0.68A
Chip size 5.08x2.75x0.1mm
Available in bare die
45 50
44 45
43 40
42 35
41 30
40
Pout @ Pin=23dBm
25
39
PAE @ Pin=23dBm
20
38 15
37 10
36 5
35 0
8 8.5 9 9.5 10 10.5 11 11.5
Frequency (GHz)
Pout and PAE versus frequency for Pulsed mode
Main Electrical Characteristics (Pulsed mode)
Tamb.= +25°C; Vd = +30V Pulse width = 25µs Duty cycle = 10%
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
8.5 11 GHz
Gain Linear Gain
24 dB
Pout Output Power
15 W
PAE Associated Power Added Efficiency.
40 %
Ref. : DSCHA86106180 - 28 jun 16
1/18 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

1 page




CHA8610-99F pdf
15W X Band High Power Amplifier
CHA8610-99F
Device thermal information
The thermal performances of the device given below are based on ums rules to evaluate the
junction temperature.
This same procedure is the basis for junction temperature evaluation of the samples used to
derive the Median lifetime and activation energy for the particular technology on which the
CHA8610-99F is fabricated (GaN Power PHEMT 0.25µm).
The temperature Tb is defined as the chip back side temperature
The thermal resistance (Rth_eq) is given for the full circuit, and assumes CW and pulsed
operation mode as given in the table.
Parameters
Thermal Resistance
Junction Temperature
Median Life
Symbol
Rth_eq
Tj
T50
Conditions
Tb=85°C, Vd=30V, Id_drive=1.5A
Pin=27dBm
Pout=42.3dBm
Pdiss=28W Pulsed Vg 25µs 10%
Value
2.4
150
1.5x107
Unit
°C/W
°C
Hrs
Thermal Resistance
Junction Temperature
Median Life
Rth_eq
Tj
T50
Tb=85°C, Vd=30V, Id_drive=1.37A
Pin=27dBm
Pout=41.3dBm
Pdiss=28W CW
3.6
185
5.85x105
°C/W
°C
Hrs
Median Life Time versus Junction Temperature
1.E+10
1.E+09
UMS GH25
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E+03
100 120 140 160 180 200 220 240
Junction Temperature (°C)
Ref. : DSCHA86106180 - 28 jun 16
5/18 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

5 Page





CHA8610-99F arduino
15W X Band High Power Amplifier
CHA8610-99F
Typical Board Measurements (CW mode)
Tamb.= +25°C, Vd = +30V, Id = 450mA
45
44
43
42
41
40
39
38
37
36
35
8
Output Power versus Frequency (Pin=24 & 27dBm)
Pin=24dBm
Pin=27dBm
8.5 9 9.5 10 10.5 11
Frequency (GHz)
11.5
Power Added Efficiency versus Frequency (Pin=24 & 27dBm)
50
45
40
35
30 Pin=24dBm
25 Pin=27dBm
20
15
10
5
0
8 8.5 9 9.5 10 10.5 11
Frequency (GHz)
11.5
Ref. : DSCHA86106180 - 28 jun 16
11/18
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

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