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PDF CHA8100 Data sheet ( Hoja de datos )
| Número de pieza | CHA8100 | |
| Descripción | X-band HBT High Power Amplifier | |
| Fabricantes | United Monolithic Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CHA8100 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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CHA8100
RoHS COMPLIANT
X-band HBT High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA8100 chip is a monolithic two-
stage high power amplifier designed for X
band applications. The HPA provides
typically 11W output power, 40% power
added efficiency and a high robustness on
mismatched output. Moreover it includes:
• an analogue biasing circuit that makes
it less sensitive to spread and chip
environment.
• an integrated TTL interface that
enables to switch the HPA with a
current consumption lower than 1mA
The circuit is 100% DC and RF tested on
wafer to ensure performance compliance.
This device is manufactured using a GaInP
HBT process, including, via holes through
the substrate and air bridges.
TI Vc TO9
TO8
TTL
Circuit
IN
TTL
Circuit
TO8
TI Vc TO9
Main Features
11W output power in pulse mode
High gain: > 18dB @ 10GHz
High PAE: 40% @ 10GHz
Two biasing modes:
- Digital control thanks to TTL interface
- Analog control thanks to biasing circuit
Chip size: 4.9 x 3.68 x 0.1mm3
Vctrl
Vc Vc
Biasing
Circuit
OUT
Biasing
Circuit
Vctrl
Vc
Vc
Main Characteristics
Vc=9V, Ic (Quiescent) = 2.1A, Pulse width=100µs, Duty cycle = 20%
Symbol
Parameter
Min Typ
Top Operating temperature range (1)
-40
F_op Operating frequency range
9
P_sat Saturated output power @ 25°C
12.5
P_3dBc Output power @ 3dBc @ 25°C
11
G_lin Linear gain @ 25°C
17
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
(1) The reference is the back-side of the chip.
18.5
Max
+80
10.5
Unit
°C
GHz
W
W
dB
Ref. : DSCHA81000069 - 10 Mar 10
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
1 page  
X-band High Power Amplifier
CHA8100
5
4,5
4
3,5
3
2,5
2
1,5
1
0,5
0
9
85°C
25°C
-40°C
9,2 9,4 9,6 9,8 10 10,2
Frequency (GHz)
Ic @ 3dBc versus frequency and temperature
10,4
Ref. : DSCHA81000069 - 10 Mar 10
5/12
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
5 Page 
X-band High Power Amplifier
Assembly recommendations in test fixture
(using TTL circuits)
CHA8100
* Performances obtained with the same accesses connected to the same supply
Note: Supply feed should be capacitively by-passed. 25µm diameter gold wire is to be
preferred.
Biasing possibilities
TTL / Vcontrol
Biasing via TTL interface
Biasing via TTL interface
Biasing via analogue control
device
Vc1, Vc2, V
9V
8V
9V or 8V
Connections
TO9 connected to C1 and C2
C2 & T08 not connected
TO8 connected to C1 and C2
C2 & T09 not connected
C2,V, Ti, TO8, TO9 not connected
Ref. : DSCHA81000069 - 10 Mar 10
11/12
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet CHA8100.PDF ] | |
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