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Número de pieza | CHA8012-99F | |
Descripción | C Band High Power Amplifier | |
Fabricantes | United Monolithic Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CHA8012-99F (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! CHA8012-99F
C Band High Power Amplifier
GaAs Monolithic Microwave IC
Description
CHA8012-99F is a monolithic two-stage
GaAs High Power Amplifier (HPA) designed
for C band applications. The HPA provides
typically 12W of output power on the 5.2 to
6.0GHz frequency band associated with 43%
of power added efficiency at 3dB gain
compression. The small signal gain is 22dB.
The overall power supply is of 8V/2.1A.
The circuit is dedicated to defense and space
applications and is also well suited for a wide
range of microwave and millimeter wave
applications and systems.
This device is manufactured using 0.25µm
Power pHEMT process, including via holes
through the substrate and air bridges. It is
available in chip form.
In
V+
STG1 STG2
V-
Main Features
■ Broadband performances: 5.2-6GHz
■ High output power: +41.5dBm
■ High PAE: 43%
■ Linear Gain: 22dB
■ DC bias: Vd=8Volt @Id=2.1A
■ Chip size 5.61x4.51x0.07mm
Out
Main Electrical Characteristics
Tamb.= +25°C, Vd = +8V Idq=2.1A Pulsed mode (conditions: length=25µs Period=250µs)
Symbol
Parameter
Min Typ Max Unit
Freq
Frequency range
5.2 6.0 GHz
Gain
Linear Gain
22 dB
P_3dBcomp Output power @ 3dB compression
41.5 dBm
PAE_3dB
Power Added Efficiency @ 3dB comp.
43.0 %
Ref. : DSCHA80123332 - 28 Nov 13
1/8 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
1 page C Band High Power Amplifier
CHA8012-99F
Typical Board Measurements
Tamb.= +25°C, Vd = +8V, Idq = 2.1A Pulsed mode
Pulse conditions: Pulse length=25µs Period=250µs
PAE @ 3dBcomp versus Frequency
50
45
40
35
30
25
4.8 5 5.2 5.4 5.6 5.8 6 6.2
Frequency (GHz)
Id @ 3dBcomp versus Frequency
6
5
4
3
2
1
0
4.8 5 5.2 5.4 5.6 5.8 6 6.2
Frequency (GHz)
Ref.: DSCHA80123332 - 28 Nov 13
5/8 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet CHA8012-99F.PDF ] |
Número de pieza | Descripción | Fabricantes |
CHA8012-99F | C Band High Power Amplifier | United Monolithic Semiconductors |
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