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Número de pieza | CHA6015-99F | |
Descripción | 2-8GHz High Power Amplifier | |
Fabricantes | United Monolithic Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CHA6015-99F (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! CHA6015-99F
2-8GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6015-99F is a HPA that provides
typically 37.5dBm output power on the
frequency band 2-8GHz. The circuit is
dedicated to defence applications and also
well suited for a wide range of microwave
applications and systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
■ Broadband performances: 2-8GHz
■ Linear Gain: 18.5dB
■ Pout at 3dB compression : 37.5dBm
■ PAE at 3dB compression : 29%
■ DC bias: Vd=7Volt@Id=2A
■ Chip size: 4.68x6.53x0.07mm
Main Electrical Characteristics
Tamb.= +25°C, Vd = 7V, Id (Quiescent) = 2A, CW
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
2 8 GHz
Gain Linear Gain
18.5 dB
P3dB
PAE3dB
Output Power @3dB gain compression
Power Added Efficiency @ 3dB gain
compression
37.5
29
dBm
%
Ref. : DSCHA60153347 - 13 Dec 13
1/14 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE -
France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
1 page 2-8GHz High Power Amplifier
CHA6015-99F
Typical Board Measurements
Vd =7V, Id (Quiescent) =2A, CW
Drain current versus frequency
for input power=0dBm and 23dBm at -40°C / 25°C / 85°C
Power added efficiency versus frequency
for input power=23dBm at -40°C / 25°C / 85°C
Ref. : DSCHA60153347 - 13 Dec 13
5/14 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5 Page 2-8GHz High Power Amplifier
Recommended assembly plan
CHA6015-99F
Recommended circuit bonding table
Port
Connection
External capacitor
Inductance (Lbonding) = 0.25nH
IN 2 gold wires with diameter of 25µm (typical length of
200µm)
Inductance (Lbonding) = 0.25nH
OUT
2 gold wires with diameter of 25µm (typical length of
200µm)
Vg
Vd (1)
Inductance 1nH
Inductance 1nH
C1 ~ 120pF, C2 ~10nF
C1 ~ 120pF, C2 ~ 10nF
(1) 2 gold wires with diameter of 25µm per pin are necessary to connect Vd2 (Pins 9 and 11)
Ref. : DSCHA60153347 - 13 Dec 13
11/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet CHA6015-99F.PDF ] |
Número de pieza | Descripción | Fabricantes |
CHA6015-99F | 2-8GHz High Power Amplifier | United Monolithic Semiconductors |
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