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Número de pieza | CHA5115-QDG | |
Descripción | X-band Medium Power Amplifier | |
Fabricantes | United Monolithic Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CHA5115-QDG (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! CHA5115-QDG
RoHS COMPLIANT
X-band Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5115-QDG is a monolithic two-stage
GaAs medium power amplifier designed for
X-band applications.
The MPA provides typically 28dBm output
power associated to 30% power added
efficiency at 3dB gain compression.
It is supplied in RoHS compliant SMD package.
UUMMSS
YYYAAWY53WW16168W785AG
Main Features
Frequency band: 8-12GHz
Output power: 28dBm @ 3dBcomp
Linear gain: 21.5dB
High PAE: 30% @ 3dBcomp
Quiescent bias point: Vd=8V, Id=190mA
24L-QFN4x4
MSL3
35
33
31
29
27
25
23
21
19
17
15
7
25
23
21
19
17
15
PAE_3dBcomp @ Temp=25°C
Pout_3dBcomp @ Temp=25°C
Linear Gain @ Temp=25°C
13
11
9
7
5
8 9 10 11 12 13
Frequency (GHz)
Main Characteristics
Tamb = 20°C, Vd = 8V, Id (Quiescent) = 190mA, Drain Pulse width=100µs, Duty cycle = 20%
Symbol
Parameter
Min Typ Max Unit
Fop Operating frequency range
8 12 GHz
PAE_P-3dB Power added efficiency @3dBcomp & 20°C
30
%
P-3dB Output power @ 3dBcomp @ 20°C
28 dBm
Ref. : DSCHA5115-QDG1199 - 18 Jul 11
1/12 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
1 page X-band Medium Power Amplifier
CHA5115-QDG
Typical on board Measurements
Vd = 8V, Id (Quiescent) = 190mA, Drain Pulse width = 100µs, Duty cycle = 20%
Output Return Loss versus frequency
0
-2
-4
-6
-8
-10
-12
-14
-16 S22 @ Temp=-40°C
-18 S22 @ Temp=25°C
-20 S22 @ Temp=+85°C
-22
-24
-26
-28
-30
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
Output power @ 1dBcomp versus frequency
30
29
28
27
26
25
24
23 Pout_1dBcomp @ Temp=-40°C
22 Pout_1dBcomp @ Temp=+25°C
Pout_1dBcomp @ Temp=+85°C
21
20
7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0
Frequency (GHz)
Ref. : DSCHA5115-QDG1199 - 18 Jul 11
5/12
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
5 Page X-band Medium Power Amplifier
DC Schematic
CHA5115-QDG
Medium Power Amplifier: 8V, 190mA
Vg Vd1
Vd2
OUT
IN
Ref. : DSCHA5115-QDG1199 - 18 Jul 11
11/12
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet CHA5115-QDG.PDF ] |
Número de pieza | Descripción | Fabricantes |
CHA5115-QDG | X-band Medium Power Amplifier | United Monolithic Semiconductors |
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