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PDF AH128 Data sheet ( Hoja de datos )

Número de pieza AH128
Descripción High Linearity InGaP HBT Amplifier
Fabricantes TriQuint 
Logotipo TriQuint Logotipo



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No Preview Available ! AH128 Hoja de datos, Descripción, Manual

Applications
Repeaters
Mobile Infrastructure
WiMAX / WiBro
LTE / WCDMA / EDGE / CDMA
AH128
¼W High Linearity InGaP HBT Amplifier
AH128-89G
Product Features
60 – 3500 MHz
+25 dBm P1dB
+40 dBm Output IP3
16.9 dB Gain at 2140 MHz
115 mA current draw
+5 V Single Supply
MTTF > 100 Years
Lead-free/Green/RoHS-compliant SOT-89 Package
3 Pin SOT-89 Package
Functional Block Diagram
Backside Paddle - GND
Product Description
The AH128 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT
is able to achieve high performance across a broad range
with +40 dBm OIP3 and +25 dBm of compressed 1dB
power while drawing 115 mA current. The AH128 is
available in a lead-free/green/RoHS-compliant SOT-89
package. All devices are 100% RF and DC tested.
The AH128 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity, medium
power, and high efficiency are required. Internal biasing
allows the AH128 to maintain high linearity over
temperature and operate directly off a single +5V supply.
This combination makes the device an excellent candidate
for transceiver line cards in current and next generation
multi-carrier 3G base stations.
1
RF IN
23
GND RF OUT / VCC
Pin Configuration
Pin No.
1
3
2
Backside Paddle
Label
RF IN
RF OUT / VCC
GND
GND
Datasheet: Rev. B 02-25-16
© 2015 TriQuint Semiconductor, Inc
Ordering Information
Part No.
Description
AH128-89G ¼ W High Linearity InGaP HBT Amplifier
Standard T/R size = 1000 pieces on a 7” reel
- 1 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com

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AH128 pdf
869 –960 MHz Reference Design
AH128
¼W High Linearity InGaP HBT Amplifier
C1 R1
C4
C3
R2 C2
Typical W-CDMA Performance at 25 °C
Frequency (MHz)
Gain
Input Return Loss
Output Return Loss
ACLR (Pout=+15 dBm)
Output P1dB
Output IP3
(Pout=+13 dBm/tone, Δf=1MHz)
Noise Figure
869
19.8
10
8.8
-49
+24.4
+39
4.7
920 960 Units
19.7 19.6 dB
12 13 dB
8.2 7.9 dB
-50 -50 %
+24.7 +24.6 dBm
+40 +41 dBm
4.6 4.6 dB
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not
used.
3. 0 jumpers can be replaced with copper trace in target application.
4. The edge of R2 is placed at 285 mils from AH128 RFout pin. (14o at 920
MHz)
5. The edge of C9 is placed against the edge of R2.
6. The edge of R1 is placed at 100 mils from AH128 RFin pin. (5o at 920
MHz)
7. The edge of C10 is placed 260 mils from the edge of R1. (13o at 920
MHz)
Performance Plots - 869 – 960 MHz Reference Design
Test conditions unless otherwise noted: VCC=+5 V, ICQ = 115mA, Temp=+25 °C, 50 Ω system.
W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Frequency
22
21
20
19
+85°C
+25°C
-40°C
18
0.84 0.86 0.88 0.90 0.92 0.94 0.96 0.98
Frequency (GHz)
Return Loss
0
-5
-10
-15
-20
+85°C
+25°C
-40°C
-25
0.84 0.86 0.88 0.90 0.92 0.94 0.96 0.98
Frequency (GHz)
Return Loss
0
-5
-10
-15
-20
+85°C
+25°C
-40°C
-25
0.84 0.86 0.88 0.90 0.92 0.94 0.96 0.98
Frequency (GHz)
22
21
20
19
18
-40
Gain vs. Temperature vs Frequency
869 MHz 920 MHz 960 MHz
-15 10 35
Tempurature (°C)
60
85
Current vs Output Average Power vs. Frequency
T=25°C
160
150
140
130
120
110
100
12
869 MHz 920 MHz 960 MHz
14 16 18 20
Output Power (dBm)
22
24
28
27
26
25
24
23
22
0.86
P1dB vs. Frequency vs. Temperature
+85°C +25°C -40°C
0.88 0.90 0.92 0.94
Frequency (GHz)
0.96
Datasheet: Rev. B 02-25-16
© 2015 TriQuint Semiconductor, Inc
- 5 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com

5 Page





AH128 arduino
AH128
¼W High Linearity InGaP HBT Amplifier
Performance Plots - 2110 – 2170 MHz Reference Design (contd)
Test conditions unless otherwise noted: VCC=+5 V, ICQ = 115mA, Temp=+25 °C, 50 Ω system
Output Average Power vs Input Average Power
25 T=25°C
24
23
22
21
20
19
3
2110 MHz
2140 MHz
2170 MHz
4567
Input Power (dBm)
8
9
ACLR vs. Output Average Power vs. Frequency
T=25°C
-40
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.3 dB @ 0.01% Probability
-45 3.84 MHz BW
-50
-55
-60
-65
10
2110 MHz 2140 MHz 2170 MHz
12 14 16
Output Power (dBm)
18
ACLR vs. Output Average Power vs. Temperature
-40 f=2140 GHz
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.3 dB @ 0.01% Probability
-45 3.84 MHz BW
-50
-55
-60
-65
10
+85°C
+25°C
-40°C
12 14 16
Output Power (dBm)
18
8
7
6
5
4
3
2
1
0
2.10
Noise Figure vs. Frequency vs. Temperature
+85°C +25°C -40°C
2.12 2.14 2.16 2.18
Frequency (GHz)
2.20
OIP3 vs. Output Power/Tone vs. Temperature
f=2140 GHz, 1 MHz spacing
45
40
35
30
25
8
+85°C
+25°C
-40°C
9 10 11 12 13 14 15 16
Output Power/Tone (dBm)
OIP3 vs. Output Power/Tone vs. Frequency
T=25°C, 1 MHz spacing
45
40
35
30
25
8
2110 MHz 2140 MHz 2170 MHz
9 10 11 12 13 14 15 16
Output Power/Tone (dBm)
OIP3 vs. Frequency
45 T=25°C, 1 MHz spacing, 10 dBm/tone
40
35
30
25
2.11 2.12 2.13 2.14 2.15 2.16 2.17
Frequency (GHz)
Efficiency vs Output Average Power vs. Frequency
T=25°C
25
2110 MHz
2140 MHz
2170 MHz
20
15
10
5
0
8 10 12 14 16 18 20
Output Power (dBm)
Datasheet: Rev. B 02-25-16
© 2015 TriQuint Semiconductor, Inc
- 11 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com

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