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PDF AH118 Data sheet ( Hoja de datos )

Número de pieza AH118
Descripción High Linearity InGaP HBT Amplifier
Fabricantes TriQuint 
Logotipo TriQuint Logotipo



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AH118
¼ Watt, High Linearity InGaP HBT Amplifier
Applications
Final stage amplifiers for Repeaters
Mobile Infrastructure
Product Features
60 – 3500 MHz
+24.7 dBm PIdB
+40.5 dBm Output IP3
20.4 dB Gain @ 900 MHz
16.5 dB Gain @ 1900 MHz
+5V Single Positive Supply
Lead-free/Green/RoHS-compliant SOT-89 Package
General Description
The AH118 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT
is able to achieve high performance across a broad range
with +40.5 dBm OIP3 and +24.7 dBm of compressed 1dB
power. The AH118 is available in a lead-
free/green/RoHS-compliant SOT-89 package. All devices
are 100% RF and DC tested.
The AH118 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. Internal biasing allows the AH118 to
maintain high linearity over temperature and operate
directly off a single +5V supply. This combination makes
the device an excellent candidate for transceiver line cards
in current and next generation multi-carrier 3G base
stations.
SOT-89 Package
Functional Block Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
Pin Configuration
Pin #
1
2
3
4
Function
Input / Base
Ground
Output / Collector
Ground
Not Recommended for
New Designs
Recommended Replacement
Part: TQP7M9101
Data Sheet: Rev B 02/14/12
© 2012 TriQuint Semiconductor, Inc.
Ordering Information
Part No.
AH118-89G
Description
High IP3 InGaP HBT Amp
Standard T/R size = 1000 pieces on a 7” reel.
- 1 of 14 -
Disclaimer: Subject to change without notice
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AH118 pdf
AH118
¼ Watt, High Linearity InGaP HBT Amplifier
Typical Performance 920-960 MHz (AH118-89PCB900)
Frequency
Gain [1]
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 [2]
Channel Power @ -45 dBc ACLR [3]
Noise Figure
Quiescent Current , Icq
Device / Supply Voltage , Vcc
MHz
dB
dB
dB
dBm
dBm
dBm
dB
mA
V
920
19.5
12.5
12.5
24.4
39.3
16.7
4.3
940
19.5
13.2
11.7
24.5
39.5
16.7
4.4
160
+5
Notes
1. Test conditions unless otherwise noted: 25 ºC, +5V, in tuned application circuit.
2. OIP3 is measured at 11 dBm Pout / tone with 1 MHz spacing.
3. ACLR test set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz Offset, PAR = 10.2 dB @ 0.01% Probability.
960
19.5
14.2
11.0
24.6
39.7
16.7
4.5
21
20
19
18
17
16
0.8
Gain vs. Frequency
25oC
0.85 0.9 0.95
Frequency (GHz)
S11 and S22 vs. Frequency
25oC
0
-5
-10
-15
-20
1 0.8
S22 S11
0.85 0.9 0.95
Frequency (GHz)
OIP3 vs. Output Power vs. Frequency
1MHz Spacing, 25oC
45
0.92GHz
0.94GHz
0.96GHz
40
35
30
25
16
8 10 12 14
Output Power / Tone (dBm)
16
25
24
23
22
21
20
0.92
P1dB vs. Frequency
CW, 25oC
0.93 0.94 0.95
Frequency (GHz)
ACLR1 vs. Output Power vs. Frequency
3GPP WCDMA, TM1+64DPCH, PAR=10.2dB, 5MHz Offset, 25oC
-35
0.92GHz
0.94GHz
0.96GHz
-40
-45
-50
-55
-60
0.96 12 13 14 15 16 17 18
Output Power (dBm)
Data Sheet: Rev B 02/14/12
© 2012 TriQuint Semiconductor, Inc.
- 5 of 14 -
Disclaimer: Subject to change without notice
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AH118 arduino
AH118
¼ Watt, High Linearity InGaP HBT Amplifier
450 MHz Reference Design
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(+11 dBm / tone, Df=1 MHz)
Noise Figure
Supply Voltage
Current
450 MHz
22 dB
15 dB
19 dB
+24 dBm
+40 dBm
5.7 dB
+5 V
160 mA
23
22
21
20
19
18
400
Gain / Return Loss
DB(|S(1,1)|) (R)
DB(|S(2,1)|) (L)
420 440 460
Frequency (MHz)
DB(|S(2,2)|) (R)
0
Vcc = +5 V
C=1e5 pF
-5
5.6 V
C=1000 pF
-10
The diode D1 is used as over-voltage protection on the evaluation
boards. It is not specifically required in the final circuit layout in
a system using a DC regulator.
-15
C=1000 pF
L=3.3 nH
NET="AH118"
L=22 nH
-20
-25
480 500
C=27 pF
C=1000 pF
2450 MHz Reference Design
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(+11 dBm / tone, Df=1 MHz)
Supply Voltage
Current
Gain
2450 MHz
14.4 dB
14 dB
15 dB
+25 dBm
+38 dBm
+5 V
160 mA
14.4 dB
Gain/ ReturnLoss
16
5
14 0
12 -5
10 -10
8 -15
DB(|S(1,1)|) (R) DB(|S(2,1)|)(L) DB(|S(2,2)|) (R)
6 -20
2.3 2.4 2.5 2.6
Frequency(GHz)
Vcc = +5 V
All passive components are of size 0603 unless otherwise noted.
The diode D1 is used as over-voltage protection on the evaluation
boards. It is not specifically required in the final circuit layout in
a system using a DC regulator.
Component R1 is shown in the silkscreen but is not used for this
configuration.
ID=D1
5.6 V
L3 - the 0 ohm resistor - can be removed (with a thru line) in the
final circuit layout.
The center of this component should be
placed .170" away from the center of C6.
ID=L2
L=5.6 nH
NET="AH118"
ID=L1
L=18 nH
size 0805
ID=C1
C=1e5 pF
size 1206
ID=C2
C=1000 pF
ID=C3
C=56 pF
size 0805
CAP
ID=C5
C=56 pF
ID=C4
C=56 pF
ID=C6
C=1.2 pF
The center of this component should
be placed .050" away from pin 1.
ID=L3
R=0 Ohm
ID=C7
C=1.2 pF
The center of this component should
be placed .200" away from pin 3.
3500 MHz Reference Design
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(+11 dBm / tone, Df=1 MHz)
Noise Figure
Supply Voltage
Current
3500 MHz
11 dB
14 dB
10 dB
+23.5 dBm
+38.5 dBm
5.0 dB
+5 V
160 mA
Gain / Return Loss
13 0
DB(|S(1,1)|) (R)
DB(|S(2,1)|) (L)
DB(|S(2,2)|) (R)
12 -5
11 -10
10 -15
9 -20
8 -25
3.4 3.45 3.5 3.55 3.6
Frequency (GHz)
Vcc = +5 V
All passive components are of size 0603 unless otherwise noted.
The diode D1 is used as over-voltage protection on the evaluation
boards. It is not specifically required in the final circuit layout in
a system using a DC regulator.
Component R1 is shown in the silkscreen but is not used for this
configuration.
ID=D1
5.6 V
The center of this component should be
placed .170" away from the center of C6.
ID=L2
L=6.8 nH
NET="AH118"
ID=C4
C=56 pF
ID=C6
C=0.2 pF
The center of this component should
be placed .050" away from pin 1.
ID=L1
L=18 nH
size 0805
ID=C1
C=100000 pF
size 1206
ID=C2
C=1000 pF
ID=C3
C=56 pF
size 0805
ID=C7
C=.8 pF
Data Sheet: Rev B 02/14/12
© 2012 TriQuint Semiconductor, Inc.
- 11 of 14
Disclaimer: Subject to change without notice
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