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PDF IPS80R1K4P7 Data sheet ( Hoja de datos )
| Número de pieza | IPS80R1K4P7 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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IPS80R1K4P7
MOSFET
800VCoolMOSªP7PowerTransistor
Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V
superjunctiontechnologiesandcombinesbest-in-classperformancewith
stateoftheartease-of-use,resultingfromInfineon’sover18years
pioneeringsuperjunctiontechnologyinnovation.
Features
•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss
•Best-in-classDPAKRDS(on)
•Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V
•IntegratedZenerDiodeESDprotection
•Best-in-classCoolMOS™qualityandreliability;qualifiedforindustrial
gradeapplicationsaccordingtoJEDEC(J-STD20andJESD22)
•Fullyoptimizedportfolio
Benefits
•Best-in-classperformance
•Enablinghigherpowerdensitydesigns,BOMsavingsandlower
assemblycosts
•Easytodriveandtoparallel
•BetterproductionyieldbyreducingESDrelatedfailures
•Lessproductionissuesandreducedfieldreturns
•Easytoselectrightpartsforfinetuningofdesigns
Applications
RecommendedforhardandsoftswitchingflybacktopologiesforLED
Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand
Industrialpower.AlsosuitableforPFCstageinConsumerapplications
andSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C
RDS(on),max
Qg,typ
ID
800
1.4
10
4
V
Ω
nC
A
Eoss @ 500V
0.9
µJ
VGS(th),typ
3
V
ESD class (HBM) 2
-
Type/OrderingCode
IPS80R1K4P7
Package
PG-TO 251
Marking
80R1K4P7
IPAKSL
tab
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-07-05
1 page  
800VCoolMOSªP7PowerTransistor
IPS80R1K4P7
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
VSD
trr
Qrr
Irrm
Min.
-
-
-
-
Values
Typ. Max.
0.9 -
800 -
5-
9-
Unit Note/TestCondition
V VGS=0V,IF=1.4A,Tf=25°C
ns VR=400V,IF=0.7A,diF/dt=50A/µs
µC VR=400V,IF=0.7A,diF/dt=50A/µs
A VR=400V,IF=0.7A,diF/dt=50A/µs
Final Data Sheet
5 Rev.2.0,2016-07-05
5 Page 
800VCoolMOSªP7PowerTransistor
IPS80R1K4P7
6PackageOutlines
MILLIMETERS
INCHES
DIM
MIN MAX
MIN MAX
A
2.20
2.35
0.087
0.093
A1
0.80
1.14
0.031
0.044
b
0.64
0.89
0.026
0.033
b2
0.65
1.15
0.026
0.045
b4
5.20
5.50
0.205
0.217
c
0.46
0.59
0.018
0.023
c2
0.46
0.89
0.018
0.023
D
6.00
6.22 0.236 0.245
D1
5.04
5.55 0.198 0.219
E
6.45
6.70 0.254 0.264
E1
4.60
5.10
0.181
0.201
e 2.28
0.090
e1 4.56
0.180
N3
3
L
3.00
3.60
0.118
0.142
L1
0.80
1.20
0.031
0.047
L2
0.90
1.25
0.035
0.049
Figure1OutlinePG-TO251,dimensionsinmm/inches
DOCUMENT NO.
Z8B00003329
SCALE
0
2.0
0 2.0
4mm
EUROPEAN PROJECTION
ISSUE DATE
01-04-2016
REVISION
07
Final Data Sheet
11 Rev.2.0,2016-07-05
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet IPS80R1K4P7.PDF ] | |
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