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PDF IPP80R450P7 Data sheet ( Hoja de datos )

Número de pieza IPP80R450P7
Descripción MOSFET
Fabricantes Infineon 
Logotipo Infineon Logotipo


Total 13 Páginas
		
IPP80R450P7 Hoja de datos, Descripción, Manual
IPP80R450P7
MOSFET
800VCoolMOSªP7PowerTransistor
Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V
superjunctiontechnologiesandcombinesbest-in-classperformancewith
stateoftheartease-of-use,resultingfromInfineon’sover18years
pioneeringsuperjunctiontechnologyinnovation.
Features
•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss
•Best-in-classDPAKRDS(on)
•Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V
•IntegratedZenerDiodeESDprotection
•Best-in-classCoolMOS™qualityandreliability;qualifiedforindustrial
gradeapplicationsaccordingtoJEDEC(J-STD20andJESD22)
•Fullyoptimizedportfolio
Benefits
•Best-in-classperformance
•Enablinghigherpowerdensitydesigns,BOMsavingsandlower
assemblycosts
•Easytodriveandtoparallel
•BetterproductionyieldbyreducingESDrelatedfailures
•Lessproductionissuesandreducedfieldreturns
•Easytoselectrightpartsforfinetuningofdesigns
Applications
RecommendedforhardandsoftswitchingflybacktopologiesforLED
Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand
Industrialpower.AlsosuitableforPFCstageinConsumerapplications
andSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C
RDS(on),max
Qg,typ
ID
800
0.45
24
11
V
nC
A
Eoss @ 500V
2.7
µJ
VGS(th),typ
3
V
ESD class (HBM) 2
-
Type/OrderingCode
IPP80R450P7
Package
PG-TO 220
Marking
80R450P7
PG-TO220
tab
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-07-05

1 page

IPP80R450P7 pdf
800VCoolMOSªP7PowerTransistor
IPP80R450P7
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
VSD
trr
Qrr
Irrm
Min.
-
-
-
-
Values
Typ. Max.
0.9 -
1000 -
11 -
17 -
Unit Note/TestCondition
V VGS=0V,IF=4.5A,Tf=25°C
ns VR=400V,IF=2.2A,diF/dt=50A/µs
µC VR=400V,IF=2.2A,diF/dt=50A/µs
A VR=400V,IF=2.2A,diF/dt=50A/µs
Final Data Sheet
5 Rev.2.0,2016-07-05

5 Page

IPP80R450P7 arduino
800VCoolMOSªP7PowerTransistor
IPP80R450P7
6PackageOutlines
j mm
c
j mm
MILLIMETERS
DIM
MIN MAX
A 4.30 4.57
A1 1.17 1.40
A2 2.15 2.72
b 0.65 0.86
b1 0.95 1.40
b2 0.95 1.15
b3 0.65 1.15
c 0.33 0.60
D
14.81
15.95
D1 8.51 9.45
D2
12.19
13.10
E 9.70 10.36
E1 6.50 8.60
e 2.54
e1 5.08
N3
H1 5.90 6.90
L
13.00
14.00
L1 - 4.80
3.60 3.89
Q 2.60 3.00
MIN
0.169
0.046
0.085
0.026
0.037
0.037
0.026
0.013
0.583
0.335
0.480
0.382
0.256
0.232
0.512
-
0.142
0.102
INCHES
0.100
0.200
3
MAX
0.180
0.055
0.107
0.034
0.055
0.045
0.045
0.024
0.628
0.372
0.516
0.408
0.339
0.272
0.551
0.189
0.153
0.118
DOCUMENT NO.
Z8B00003318
SCALE
0
2.5
0 2.5
5mm
EUROPEAN PROJECTION
ISSUE DATE
30-07-2009
REVISION
06
Figure1OutlinePG-TO220,dimensionsinmm/inches
Final Data Sheet
11 Rev.2.0,2016-07-05

11 Page

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