DataSheet.es    


PDF IPD70R1K4CE Data sheet ( Hoja de datos )

Número de pieza IPD70R1K4CE
Descripción MOSFET ( Transistor )
Fabricantes Infineon 
Logotipo Infineon Logotipo



Hay una vista previa y un enlace de descarga de IPD70R1K4CE (archivo pdf) en la parte inferior de esta página.


Total 15 Páginas

No Preview Available ! IPD70R1K4CE Hoja de datos, Descripción, Manual

IPD70R1K4CE,IPS70R1K4CE
MOSFET
700VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
Adapter,LCD&PDPTVandIndoorlighting
DPAK
tab
2
1
3
IPAKSL
tab
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
750
V
RDS(on),max
1400
m
Qg.typ
10.5
nC
Id.typ
5.4
A
ID,pulse
8.3
A
Eoss@400V
1.15
µJ
Type/OrderingCode
IPD70R1K4CE
IPS70R1K4CE
Package
PG-TO 252
PG-TO 251
Marking
70S1K4CE
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-02-16

1 page




IPD70R1K4CE pdf
700VCoolMOSªCEPowerTransistor
IPD70R1K4CE,IPS70R1K4CE
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V(BR)DSS
V(GS)th
IDSS
IGSS
RDS(on)
RG
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance,
energy related1)
Effective output capacitance,
time related2)
Turn-on delay time
Ciss
Coss
Co(er)
Co(tr)
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
700
2.5
-
-
-
-
-
-
Values
Typ. Max.
--
3.0 3.5
-1
10 -
- 100
1.26 1.40
3.28 -
6.5 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=0.1mA
µA
VDS=700V,VGS=0V,Tj=25°C
VDS=700V,VGS=0V,Tj=150°C
nA VGS=20V,VDS=0V
VGS=10V,ID=1A,Tj=25°C
VGS=10V,ID=1A,Tj=150°C
f=1MHz,opendrain
Min.
-
-
-
Values
Typ. Max.
225 -
18 -
10 -
Unit Note/TestCondition
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=0...480V
- 42 - pF ID=constant,VGS=0V,VDS=0...480V
-
7.7 -
ns
VDD=400V,VGS=13V,ID=1.5A,
RG=10.2;seetable9
-
5.9 -
ns
VDD=400V,VGS=13V,ID=1.5A,
RG=10.2;seetable9
-
33 -
ns
VDD=400V,VGS=13V,ID=1.5A,
RG=10.2;seetable9
-
18.2 -
ns
VDD=400V,VGS=13V,ID=1.5A,
RG=10.2;seetable9
Min.
-
-
-
-
Values
Typ. Max.
1.3 -
5.8 -
10.5 -
5.4 -
Unit Note/TestCondition
nC VDD=480V,ID=1.5A,VGS=0to10V
nC VDD=480V,ID=1.5A,VGS=0to10V
nC VDD=480V,ID=1.5A,VGS=0to10V
V VDD=480V,ID=1.5A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V
Final Data Sheet
5
Rev.2.0,2016-02-16

5 Page





IPD70R1K4CE arduino
700VCoolMOSªCEPowerTransistor
IPD70R1K4CE,IPS70R1K4CE
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Diode recovery waveform
V,I
VDS( peak)
VDS
IF
dIF / dt
Irrm
VDS
trr
tF tS
IF t
QF QS
10 %Irrm
dIrr / dt Qtrrrr ==tFQ+F t+S QS
Table9Switchingtimes
Switching times test circuit for inductive load
VGS
VDS
VDS
VGS
Switching times waveform
90%
10%
td(on) tr
ton
td(off) tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
ID VDS
Unclamped inductive waveform
V(BR)DS
VDS
ID
VDS
Final Data Sheet
11 Rev.2.0,2016-02-16

11 Page







PáginasTotal 15 Páginas
PDF Descargar[ Datasheet IPD70R1K4CE.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IPD70R1K4CEMOSFET ( Transistor )Infineon
Infineon

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar