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PDF IPA80R450P7 Data sheet ( Hoja de datos )
| Número de pieza | IPA80R450P7 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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IPA80R450P7
MOSFET
800VCoolMOSªP7PowerTransistor
Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V
superjunctiontechnologiesandcombinesbest-in-classperformancewith
stateoftheartease-of-use,resultingfromInfineon’sover18years
pioneeringsuperjunctiontechnologyinnovation.
Features
•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss
•Best-in-classDPAKRDS(on)
•Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V
•IntegratedZenerDiodeESDprotection
•Best-in-classCoolMOS™qualityandreliability;qualifiedforindustrial
gradeapplicationsaccordingtoJEDEC(J-STD20andJESD22)
•Fullyoptimizedportfolio
Benefits
•Best-in-classperformance
•Enablinghigherpowerdensitydesigns,BOMsavingsandlower
assemblycosts
•Easytodriveandtoparallel
•BetterproductionyieldbyreducingESDrelatedfailures
•Lessproductionissuesandreducedfieldreturns
•Easytoselectrightpartsforfinetuningofdesigns
Applications
RecommendedforhardandsoftswitchingflybacktopologiesforLED
Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand
Industrialpower.AlsosuitableforPFCstageinConsumerapplications
andSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C
RDS(on),max
Qg,typ
ID
800
0.45
24
11
V
Ω
nC
A
Eoss @ 500V
2.7
µJ
VGS(th),typ
3
V
ESD class (HBM) 2
-
Type/OrderingCode
IPA80R450P7
Package
PG-TO 220 FullPAK
Marking
80R450P7
PG-TO220FP
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-07-05
1 page  
800VCoolMOSªP7PowerTransistor
IPA80R450P7
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
VSD
trr
Qrr
Irrm
Min.
-
-
-
-
Values
Typ. Max.
0.9 -
1000 -
11 -
17 -
Unit Note/TestCondition
V VGS=0V,IF=4.5A,Tf=25°C
ns VR=400V,IF=2.2A,diF/dt=50A/µs
µC VR=400V,IF=2.2A,diF/dt=50A/µs
A VR=400V,IF=2.2A,diF/dt=50A/µs
Final Data Sheet
5 Rev.2.0,2016-07-05
5 Page 
800VCoolMOSªP7PowerTransistor
IPA80R450P7
6PackageOutlines
DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
DIM MILLIMETERS
INCHES
MIN MAX MIN MAX
A
4.50
4.90
0.177
0.193
A1
2.34
2.85
0.092
0.112
A2
2.42
2.86
0.095
0.113
b
0.65
0.90
0.026
0.035
b1
0.95
1.38
0.037
0.054
b2
0.95
1.51
0.037
0.059
b3
0.65
1.38
0.026
0.054
b4
0.65
1.51
0.026
0.059
c
0.40
0.63
0.016
0.025
D
15.67
16.15
0.617
0.636
D1
8.97
9.83
0.353
0.387
E
10.00
10.65
0.394
0.419
e 2.54 (BSC)
0.100 (BSC)
e1 5.08
0.200
N3
3
H
28.70
29.75
1.130
1.171
L
12.78
13.75
0.503
0.541
L1
2.83 3.45
0.111
0.136
2.95 3.38
0.116
0.133
Q
3.15 3.50
0.124
0.138
DOCUMENT NO.
Z8B00003319
SCALE 0
2.5
0 2.5
5mm
EUROPEAN PROJECTION
ISSUE DATE
18-03-2016
REVISION
06
Figure1OutlinePG-TO220FullPAK,dimensionsinmm/inches
Final Data Sheet
11
Rev.2.0,2016-07-05
11 Page | ||
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