(PDF) 2SA1069A-Z Datasheet - Silicon PNP Power Transistor

Número de pieza	2SA1069A-Z
Descripción	Silicon PNP Power Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1069A-Z DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -12 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -10 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2.5 A 1.5 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark 1 page

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PDF 2SA1069A-Z Data sheet ( Hoja de datos )