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PDF BM60055FV-C Data sheet ( Hoja de datos )
| Número de pieza | BM60055FV-C | |
| Descripción | 1ch Gate Driver Providing Galvanic Isolation 2500Vrms Isolation Voltage | |
| Fabricantes | ROHM Semiconductor | |
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Datasheet
1ch Gate Driver Providing Galvanic Isolation
2500Vrms Isolation Voltage
BM60055FV-C
General Description
The BM60055FV-C is a gate driver with an isolation
voltage of 2500Vrms, I/O delay time of 250ns, minimum
input pulse width of 170ns. It incorporates the fault signal
output function (FLT_UVLO, FLT_SC, FLT_OT), under
voltage lockout (UVLO) function, short circuit protection
(SCP) function, over temperature protection (OT)
function, over current protection (OC) function, Soft turn
off function, 2 level turn off function, active miller
clamping function, switching controller function and
output state feedback function.
Key Specifications
Isolation Voltage:
Maximum Gate Drive Voltage:
I/O Delay Time:
Minimum Input Pulse Width:
2500 [Vrms] (Max)
24 [V] (Max)
250 [ns] (Max)
170 [ns] (Max)
Package
SSOP-B28W
W(Typ) x D(Typ) x H(Max)
9.2mm x 10.4mm x 2.4mm
Features
Fault Signal Output Function
Under Voltage Lockout Function
Short Circuit Protection Function
Over Current Protection Function
Over Temperature Protection
Temperature Compensation of OC
Soft Turn Off Function of SCP
2 Level Turn Off Function
Active Miller Clamping
Switching Controller
Output State Feedback Function
AEC-Q100 Qualified (Note 1)
(Note 1:Grade1)
Applications
Automotive isolated IGBT/MOSFET inverter
gate drive.
Automotive DC-DC converter.
Industrial inverters system.
UPS system.
Typical Application Circuit
ECU
V_BA TT
Rec tifier
/ Ripple f ilter
GND1
VC C 2
Rec tifier
/ Ripple f ilter
GND2
Snubber
GND1
FLT_UVL O
INB
INA
OSFB
FLT_OT
FLT_SC
FB
COMP
V_BATT
VREG
FET_G
SENSE
GND1
GND1
OSC
FLT
RESE T OSC
OSFB
LOGIC
T IMER
QS
R
DAC
-
++
-
+
REGULATOR
OSC
QS
R
SLOP E
OSC
T IMER
T IMER
MAX.Dut y
UVLO_ BATT
LOGIC
PRE
DRIVER
2 level T urn
off Contol
Filter
Filter
CURRENT
SOURCE
T emp
Compens ation
GND2
OUT2
OUT1
VCC2
PROOUT
TC
TO
TCOMP
RTOFF
LVOFF
SCPIN
OCIN
UVLOIN
GND2
VC C 2
Filter
Filter
GND2
Figure 1. Typical Application Circuit
〇Product structure : Silicon integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 14 • 001
〇This product has no designed protection against radioactive rays
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TSZ02201-0818ABH00120-1-2
15.Feb.2016 Rev.001
1 page  
BM60055FV-C
Thermal Resistance(Note6)
Parameter
Symbol
Thermal Resistance (Typ)
1s(Note 8)
2s2p(Note 9)
Unit
TO252-J5 / TO252-3
Junction to Ambient
θJA 112.9
64.4 °C/W
Junction to Top Characterization Parameter(Note 7)
ΨJT 34
23 °C/W
(Note 6)Based on JESD51-2A(Still-Air)
(Note 7)The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside
surface of the component package.
(Note 8)Using a PCB board based on JESD51-3.
(Note 9)Using a PCB board based on JESD51-7.
Layer Number of
Measurement Board
Single
Top
Copper Pattern
Footprints and Traces
Layer Number of
Measurement Board
4 Layers
Top
Copper Pattern
Footprints and Traces
Material
FR-4
Thickness
70μm
Material
FR-4
Thickness
70μm
Board Size
114.3mm x 76.2mm x 1.57mmt
Board Size
114.3mm x 76.2mm x 1.6mmt
2 Internal Layers
Copper Pattern
74.2mm2 (Square)
Thickness
35μm
Bottom
Copper Pattern
74.2mm2(Square)
Thickness
70μm
Recommended Operating Conditions (Ta= -40°C to +125°C)
Parameter
Main Power Supply Voltage
Output-side Supply Voltage
Output side UVLO voltage
(Note 10) GND1 reference
(Note 11) GND2 reference
Symbol
VBATT(Note 10)
VCC2(Note 11)
VUV2TH(Note11)
Min
4.5
9
6
Insulation Related Characteristics
Parameter
Insulation Resistance (VIO=500V)
Insulation Withstand Voltage / 1min
Insulation Test Voltage / 1sec
Symbol
RS
VISO
VISO
Characteristic
>109
2500
3000
Max Units
30.0 V
24 V
-V
Unit
Ω
Vrms
Vrms
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
5/37
TSZ02201-0818ABH00120-1-2
15.Feb.2016 Rev.001
5 Page 
BM60055FV-C
Typical Performance Curves - continued
0.23
0.21
0.19
0.17
-40
0 40 80 120
Ta[℃]
Figure 11. Over-Current Detection Threshold
170
160
150
140
INA OFF Pulse
INB OFF Pulse
130
120
110
100 INA ON Pulse INB ON Pulse
90
80
70
-40
0 40 80 120
Ta[℃]
Figure 12. Logic input Filtering Time
(INA,INB)
1.25
1.05
0.85
0.65
0.45
0.25
-40
0 40 80 120
Ta[℃]
Figure 13. OUT1 Source ON-Resistance
(IOUT=40mA)
1.05
0.85
0.65
0.45
0.25
0.05
-40
0 40
Ta[℃]
80 120
Figure 14. OUT1 Sink ON-Resistance
(IOUT=40mA)
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
11/37
TSZ02201-0818ABH00120-1-2
15.Feb.2016 Rev.001
11 Page | ||
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