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PDF BM60051FV-C Data sheet ( Hoja de datos )

Número de pieza BM60051FV-C
Descripción 1ch Gate Driver Providing Galvanic Isolation 2500Vrms Isolation Voltage
Fabricantes ROHM Semiconductor 
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Datasheet
1ch Gate Driver Providing Galvanic Isolation
2500Vrms Isolation Voltage
BM60051FV-C
General Description
The BM60051FV-C is a gate driver with an isolation
voltage of 2500Vrms, I/O delay time of 260ns, minimum
input pulse width of 180ns, and incorporates the fault
signal output function, under voltage lockout (UVLO)
function, short circuit protection (SCP) function, active
miller clamping function, temperature monitoring function,
switching controller function and output state feedback
function.
Features
Fault signal output function
Under voltage lockout function
Short circuit protection function
Active Miller Clamping
Temperature monitor
Switching controller
Output State Feedback Function
UL1577 Recognized:File No. E356010
AEC-Q100 Qualified (Note 1)
(Note 1:Grade1)
Key Specifications
Isolation Voltage:
Maximum Gate Drive Voltage:
I/O Delay Time:
Minimum Input Pulse Width:
2500 [Vrms] (Max)
24 [V] (Max)
260 [ns] (Max)
180 [ns] (Max)
Packages
SSOP-B28W
W(Typ) x D(Typ) x H(Max)
9.2mm x 10.4mm x 2.4mm
Applications
Automotive isolated IGBT/MOSFET inverter
gate drive.
Automotive DC-DC converter.
Industrial inverters system.
UPS system.
Typical Application Circuit
ECU
VC C 1
V_BA TT
R ec tifier
/ Ripple f ilter
GND1
VC C 2
R ec tifier
/ Ripple f ilter
GND2
Snubber
GND1
FLT
DIS
INA
OSFB
SENSOR
VCC1
FB
COMP
V_BATT
VREG
FET_G
SENSE
GND1
GND1
OSC UVLO1
FLT
RESE T OSC
OSFB
T IMER
QS
R
LOGIC
DAC
-
++
-
+
REGULATOR
OSC
SLOP E
OSC
QS
R
S
Q
R
R ST
U VL O1
UVLO_BA TT
MAX.Dut y
UVLO_BATT
LOGIC
FLT
EDGE
PREDRIVER
CURRENT
SOURCE
OSC
GND2
OUT2
NC
OUT1
VCC2
PROOUT
TC
TO2
TO1
SCPIN3
SCPIN2
SCPIN1
UVLOIN
GND2
VC C 2
Filter
Filter
Filter
GND2
Figure 1. Typical Application Circuit
Product structure : Silicon integrated circuit
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111 14 001
This product has no designed protection against radioactive rays
1/45
TSZ02201-0818ABH00010-1-2
25.Dec.2015 Rev.003

1 page




BM60051FV-C pdf
BM60051FV-C
Electrical Characteristics - continued
(Unless otherwise specified Ta=-40°C to125°C, VBATT=5V to 24V, VCC1=4.5V to 5.5V, VCC2=8V to 24V)
Parameter
Temperature Monitor
TC Pin Voltage
TOx Pin Output Current
SENSOR Output Frequency
SENSOR Output Duty1
SENSOR Output Duty2
SENSOR Output Duty3
TOx Pin Disconnect Detection
Voltage
SENSOR ON Resistance
(Source-side)
SENSOR ON Resistance
(Sink-side)
Protection Functions
Input-side UVLO OFF Voltage
Input-side UVLO ON Voltage
Input-side UVLO Filtering Time
Input-side UVLO Delay Time
(OUT)
Input-side UVLO Delay Time
(FLT)
Output-side UVLO OFF
Threshold Voltage
Output-side UVLO ON
Threshold Voltage
Output-side UVLO
Filtering Time
Output-side UVLO Delay Time
(OUT)
Output-side UVLO Delay Time
(FLT)
Short Current Detection
Voltage
Short Current Detection
Filtering Time
Short Current Detection
Delay time (OUT)
Short Current Detection
Delay Time (PROOUT)
Short Current Detection
Delay Time (FLT)
Soft Turn OFF Release Time
FLT Output ON-Resistance
Fault Output Holding Time
Gate State H Detection
Threshold Voltage
Gate State L Detection
Threshold Voltage
OSFB Output Filtering Time
OSFB Output ON-Resistance
OSFB Output Holding Time
Symbol
VTC
ITO
fOSC_TO
DSENSOR1
DSENSOR2
DSENSOR3
VTOH
RSENSORH
RSENSORL
VUVLO1H
VUVLO1L
tUVLO1FIL
tDUVLO1OUT
tDUVLO1FLT
VUVLO2H
VUVLO2L
tUVLO2FIL
tDUVLO2OUT
tDUVLO2FLT
VSCDET
tSCPFIL
tDSCPOUT
tDSCPPRO
tDSCPFLT
tSCPOFF
RFLTL
tFLTRLS
VOSFBH
VOSFBL
tOSFBFIL
ROSFB
tOSFBRLS
Min
0.975
0.97
8
87
47
5
7
-
-
4.05
3.95
2
2
2
0.95
0.85
2
2
3
0.67
0.15
0.16
0.17
1
30
-
20
4.5
4.0
1.5
-
20
Typ
1.000
1.00
10
90
50.0
10
8
60
60
Max
1.025
1.03
14
93
53
15
9
160
160
Unit Conditions
V
mA RTC=10kΩ
kHz
% VTOx=1.35V
% VTOx=2.59V
% VTOx=3.84V
V
Ω ISENSOR=5mA
Ω ISENSOR=5mA
4.25
4.15
10
10
10
1.00
0.90
10
10
-
0.70
0.30
0.33
0.35
-
-
30
40
5.0
4.5
2.0
30
40
4.45 V
4.35 V
30 µs
30 µs
30 µs
1.05 V
0.95 V
30 µs
30 µs
65 µs
0.73 V
0.45 µs
0.50 µs OUT1=30kΩ Pull down
0.53 µs PROOUT=30kΩ Pull up
35 µs
110 µs OUT1=30kΩ Pull up
80 Ω IFLT=5mA
60 ms
5.5 V
5.0 V
2.5 µs
80 Ω IOSFB=5mA
60 ms
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111 15 001
5/45
TSZ02201-0818ABH00010-1-2
25.Dec.2015 Rev.003

5 Page





BM60051FV-C arduino
BM60051FV-C
5.5
5.25
25°C
-40°C
5
4.75
4.5
125°C
4.25
4
4.5
9 13.5 18 22.5
VBATT [V]
Figure 19. FET_G Output Voltage H1/H2
0.3
0.2
25°C
0.1 -40°C
0
-0.1
125°C
-0.2
-0.3
4.5
9 13.5 18 22.5
VBATT [V]
Figure 20. FET_G Output Voltage L
12
9
25°C
125°C
6
3
4.5
-40°C
9 13.5 18
VBATT [V]
22.5
Figure 21. FET_G ON-Resistance
(Source-side)
1.3
1.1
125°C
25°C
0.9
0.7
0.5
0.3
4.5
-40°C
9 13.5 18
VBATT [V]
22.5
Figure 22. FET_G ON-Resistance
(Sink-side)
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111 15 001
11/45
TSZ02201-0818ABH00010-1-2
25.Dec.2015 Rev.003

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