(PDF) 2SB1201 Datasheet - Silicon PNP Power Transistor

Número de pieza	2SB1201
Descripción	Silicon PNP Power Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1201 DESCRIPTION ·Large current capacitance and wide ASO ·Small and slim package making it easy to make 2SB1201/2SD1801-used set smaller ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -4 A 15 W 0.8 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark 1 page

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PDF 2SB1201 Data sheet ( Hoja de datos )