(PDF) BDT92F Datasheet - Silicon NPN Power Transistor

Número de pieza	BDT92F
Descripción	Silicon NPN Power Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BDT91F/93F/95F DESCRIPTION ·DC Current Gain- hFE= 20~200@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT91F; 80V(Min)- BDT93F; 100V(Min)- BDT95F ·Complement to Type BDT92F/94F/96F APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT91F 60 VCBO Collector-Base Voltage BDT93F 80 V BDT95F 100 BDT91F 60 VCEO Collector-Emitter Voltage BDT93F 80 V BDT95F 100 VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4A 32 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 6.4 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark 1 page

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PDF BDT92F Data sheet ( Hoja de datos )