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PDF CDBN0130 Data sheet ( Hoja de datos )

Número de pieza CDBN0130
Descripción SMD Schottky Barrier Diode
Fabricantes Comchip Technology 
Logotipo Comchip Technology Logotipo



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No Preview Available ! CDBN0130 Hoja de datos, Descripción, Manual

SMD Schottky Barrier Diode
CDBN0130
Io = 100mA
VR = 30 Volt s
Features
Designed for mounting on small surface
Extremely thin package
Low stored charge
Majority carrier conduction
Mechanical data
Case: 1206(3216) Standard package,
molded plastic
Terminals: Solder plated, solderable per
MIL-STD-750, method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any.
Weight: 0.0085 gram.(approximately)
COMCHIP
www.comchip.com.tw
1206 (3216)
0.126(3.20)
0.118(3.00)
0.020(0.50) Typ.
0.010(R0.25) Typ.
0.063(1.60)
0.055(1.40)
0.043 (1.10)
0.035(0.90)
Dimensions in inches and (millimeter)
Maximum Rating ( at T A = 25 C unless otherwise noted )
Parameter
Conditions
Symbol Min Typ Max Unit
Repetitive peak reverse voltage
VRRM
35 V
Reverse voltage
VR 30 V
Average forward current
Io 100 mA
Forward current , surge peak
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
IFSM
1000
mA
Power dissipation
PD 250 mW
Storage temperature
TSTG
-40
+125
C
Junction temperature
T j -40
+125
C
Electrical Characteristics ( at T A = 25 C unless otherwise noted )
Parameter
Conditions
Forward voltage
I F = 1 00 mA DC
Reverse current
VR = 30 V
Capacitance between terminals f = 1MHz, and 10 VDC reverse voltage
Symbol Min Typ Max Unit
VF 0.44 V
IR 30 uA
CT 10 pF
RDS0208008-C
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