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PDF CDBD835 Data sheet ( Hoja de datos )

Número de pieza CDBD835
Descripción SMD Schottky Barrier Rectifier
Fabricantes Comchip Technology 
Logotipo Comchip Technology Logotipo



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No Preview Available ! CDBD835 Hoja de datos, Descripción, Manual

SMD Schottky Barrier Rectifier
CDBD835L
Reverse Voltage: 35 Volts
Forward Current: 8.0 Amp
COMCHIP
www.comchip.com.tw
2
Features
Lead formed for surface mount
Easy pick and place
Plastic package has Underwriters Lab.
flammability classification 94V-0
Low Switching Noise
Low forward voltage drop
Mechanical data
Case: TO-252AA molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Mounting position: Any
Approx. Weight: 0.295 gram
TO-252AA (D-PAK)
Unit: Millmeters
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
Q
S
T
V
X
Min.
5.40
6.30
2.20
5.20
8.00
6.60
2.40
0.90
0.45
0.45
0.90
0.70
0.50
0.60
2.70
5.00
4.80
1.20
0.80
Max.
5.60
6.70
2.40
5.50
10.00
7.00
3.00
1.50
0.55
0.60
1.50
0.90
0.70
0.90
3.10
5.40
5.20
2.30
1.40
1.20
Maximum Ratings and Electrical Characterics
Parameter
Symbol
Max.Repetitive Peak Reverse Voltage
Max. DC Blocking Voltage
Max. RMS Voltage
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
( JEDEC method )
Average Rectifier Forward Current (Note 1)
Peak Repetitive Foward Current (at Rated VR,
Square Wave, 20KHz, Tc=80 C)
Max. Instantaneous Forward Current at 8.0 A (Note 2)
Max. DC Reverse Current at Rated DC Blocking
Voltage
Ta=25 C
Ta=100 C
Max. Thermal Resistance (Note 3)
Operating Junction temperature
Storage Temperature
VRRM
VDC
VRMS
IFSM
IF(AV)
IFRM
VF
IR
R JA
R JC
Tj
TSTG
CDBD835
35
35
24.5
75
8.0
16
0.5
1.4
35
80
6.0
-65 to +125
-65 to +150
Note 1. Total deviceRated Vp at Tc=100 C
2. Pulse width = 300uS, duty cycle less than 2%.
3. Thermal resistance from junction to ambient and junction to case mounted on minimum pad size recommended
MDS0211012A
Unit
V
V
V
A
A
A
V
A
C/W
C
C
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