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Número de pieza | FDMC7672S | |
Descripción | N-Channel Power Trench SyncFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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No Preview Available ! FDMC7672S
N-Channel Power Trench® SyncFETTM
30 V, 14.8 A, 6.0 m:
Features
General Description
September 2010
Max rDS(on) = 6.0 m: at VGS = 10 V, ID = 14.8 A
Max rDS(on) = 7.1 m: at VGS = 4.5 V, ID = 12.4 A
High performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
This FDMC7672S is produced using Fairchild Semiconductor’s
advanced Power Trench® process that has been especially
tailored to minimize the on-state resistance. This device is well
suited for Power Management and load switching applications
common in Notebook Computers and Portable Battery packs.
Applications
DC - DC Buck Converters
Notebook battery power mangement
Load switch in Notebook
Top Bottom
Pin 1
S SG
S
MLP 3.3x3.3
DD
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
18
14.8
45
60
36
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.5
53
°C/W
°C/W
Device Marking
FDMC7672S
Device
FDMC7672S
Package
MLP 3.3X3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDMC7672S Rev.C3
1
www.fairchildsemi.com
1 page Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
0.001
0.0001
10-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
SINGLE PULSE
RTJA = 125 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
1000
©2010 Fairchild Semiconductor Corporation
FDMC7672S Rev.C3
5
www.fairchildsemi.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet FDMC7672S.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDMC7672 | N-Channel Power Trench MOSFET | Fairchild Semiconductor |
FDMC7672S | N-Channel Power Trench SyncFET | Fairchild Semiconductor |
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