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Número de pieza | S20T100CB | |
Descripción | Dual Schottky Barrier Power Rectifiers | |
Fabricantes | Mospec Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de S20T100CB (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Switchmode
Dual Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Refractory metal capable of high
temperature operation metal. The proprietary barrier technology allows for
reliable operation up to 150℃ junction temperature. Typical application are in
switching Mode Power Supplies such as adaptors, DC/DC converters, free-
wheeling and polarity protection diodes.
Features
*Low Forward Voltage.
*Low Switching noise.
*High Current Capacity
*Guarantee Reverse Avalanche.
*Guard-Ring for Stress Protection.
*Low Power Loss & High efficiency.
*175℃ Operating Junction Temperature
*Low Stored Charge Majority Carrier Conduction.
*Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
*In compliance with EU RoHs 2002/95/EC directives
*Mounting Torqure: 5 in-lbs.Max.
S20T100CB
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
100 VOLTS
TO-220AB
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current ( per diode )
Total Device (Rated VR),
Non-Repetitive Peak Surge Current (Surge applied at
rate load conditions halfware, single phase, 60Hz)
Operating and Storage Junction Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IF(AV)
IFSM
TJ , Tstg
S20T100CB
100
70
10
20
315
-65 to +150
Unit
V
V
A
A
℃
THERMAL RESISTANCES
Typical Thermal Resistance junction to case ( per device )
Rθj-c
3.4 ℃/w
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
( IF =0.1 Amp TC = 25℃)
( IF =5.0 Amp TC = 25℃)
( IF =10 Amp TC = 25℃)
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25℃)
( Rated DC Voltage, TC = 125℃)
( per diode )
Symbol Min Typ. Max. Unit
VF
--- 0.31 0.32
--- 0.50 0.52
V
--- 0.59 0.61
IR -- 0.03 0.05 mA
-- 9 12
DIM MILLIMETERS
MIN MAX
A 14.68 15.32
B 9.78 10.42
C 5.02 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 2.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.98
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet S20T100CB.PDF ] |
Número de pieza | Descripción | Fabricantes |
S20T100C | Dual Schottky Barrier Power Rectifiers | Mospec Semiconductor |
S20T100CB | Dual Schottky Barrier Power Rectifiers | Mospec Semiconductor |
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