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PDF THN420Z Data sheet ( Hoja de datos )

Número de pieza THN420Z
Descripción SiGe NPN Transistor
Fabricantes AUK 
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No Preview Available ! THN420Z Hoja de datos, Descripción, Manual

Semiconductor
THN420Z
SiGe NPN Transistor
Applications
- Low noise amplifier, oscillator and buffer amplifier up to 3 GHz
SOT-343
Unit in mm
Features
- High gain bandwidth product
fT = 17 GHz at VCE = 2 V, IC = 15 mA
fT = 20 GHz at VCE = 3 V, IC = 30 mA
- High power gain
|S21|2 = 16 dB at VCE = 2 V, IC = 15 mA, f = 1.5 GHz
- Low noise figure
NF = 1.1 dB at VCE = 2 V, IC = 5 mA, f = 1.8 GHz
Absolute Maximum Ratings (TA = 25 )
Param eter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current
Total Power Dissipation
Operating Junction Temperature
Storage Temperature
Sym bol
BVCBO
BVCEO
BVEBO
IC
Ptot
Tj
Tstg
Caution : Electro Static Discharge sensitive device
13
24
Pin Configuration
1. Base
2. Emitter
3. Emitter
4. Collector
Ratings
10
4.5
1.5
35
160
150
-65 ~ 150
Unit
V
V
V
mA
mW
1

1 page




THN420Z pdf
Power Gain
vs. Frequency
30
V =2V
CE
25
I = 5 mA
C
MSG
20
15
|S |2
21
10
MAG
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency (GHz)
THN420Z
30
V =2V
CE
25
I = 15 mA
C
MSG
20
MAG
15
|S |2
21
10
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency (GHz)
Noise Figure
vs. Collector Current
at VCE = 2 V, IC =parameters, ZS = ZSopt
3.0
f = 1.8 GHz
2.5
2.0
1.5
1.0
0.5
0.0
0 5 10 15 20 25 30 35 40
Collector Current, I (mA)
C
Noise Figure and
Associated Gain Contours
at VCE = 2 V, IC = 5 mA, f = 1.8 GHz
Output
Stable
Input
Stable
Ga=17dB
=16dB
=15dB
=14dB
=13dB
5 contour
Γopt = 0.15592
Fmin =1.05dB
=1.1dB
=1.2dB
=1.3dB
4 contour
5

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