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PDF THN405Z Data sheet ( Hoja de datos )
| Número de pieza | THN405Z | |
| Descripción | SiGe NPN Transistor | |
| Fabricantes | AUK | |
| Logotipo |  |
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Semiconductor
THN405Z
SiGe NPN Transistor
□ Applications
- Low noise amplifier, oscillator and buffer amplifier up to 3 GHz
SOT-343
Unit in mm
□ Features
- High gain bandwidth product
fT = 17 GHz at VCE = 2 V, IC = 10 mA
fT = 19 GHz at VCE = 3 V, IC = 15 mA
- High power gain
|S21|2 = 15 dB at VCE = 2 V, IC = 5 mA, f = 1.8 GHz
MAG = 20 dB at VCE = 2 V, IC = 5 mA, f = 1.8 GHz
- Low noise figure
NF = 1.4 dB at VCE = 2 V, IC = 2 mA, f = 1.8 GHz
□ Absolute Maximum Ratings ( TA = 25 ℃ )
Param eter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current
Total Power Dissipation
Operating Junction Temperature
Storage Temperature
Sym bol
BVCBO
BVCEO
BVEBO
IC
Ptot
Tj
Tstg
Caution : Electro Static Discharge sensitive device
13
24
Pin Configuration
1. Base
2. Emitter
3. Emitter
4. Collector
Ratings
10
4.5
1.5
25
75
150
-65 ~ 150
Unit
V
V
V
mA
mW
℃
℃
1
1 page  
Power Gain
vs. Frequency
40
35
V =2V
CE
I = 5 mA
C
30
25 MSG
20
MAG
15
|S |2
10 21
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency (GHz)
Noise Figure
vs. Collector Current
at VCE = 2 V, IC =parameters, ZS = ZSopt
4.0
3.5
3.0
2.5
f = 1.8 GHz
2.0
f = 0.9 GHz
1.5
1.0
0.5
0.0
0 2 4 6 8 10 12 14 16
Collector Current, I (mA)
C
THN405Z
40
35
V =3V
CE
I = 5 mA
C
30
25 MSG
20
MAG
15
|S |2
10 21
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency (GHz)
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet THN405Z.PDF ] | |
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