PDF CY7C1019CV33 Data sheet ( Hoja de datos )

Número de pieza	CY7C1019CV33
Descripción	1-Mbit (128 K x 8) Static RAM
Fabricantes	Cypress Semiconductor
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No Preview Available ! 1-Mbit (128 K × 8) Static RAM Features ■ Temperature Ranges ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C ■ Pin and Function compatible with CY7C1019BV33 ■ High Speed ❐ tAA = 10 ns ■ CMOS for optimum Speed and Power ■ Data Retention at 2.0 V ■ Center Power/Ground Pinout ■ Automatic Power Down when deselected ■ Easy Memory Expansion with CE and OE Options ■ Available in Pb-free 32-pin TSOP II package Logic Block Diagram CY7C1019CV33 1-Mbit (128 K × 8) Static RAM Functional Description The CY7C1019CV33 is a high performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tristate drivers. This device has an automatic power down feature that significantly reduces power consumption when deselected. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins. The eight input/output pins (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW, and WE LOW). For a complete list of related documentation, click here. A0 A1 A2 AA34 AA56 AA78 CE WE OE INPUT BUFFER 128K x 8 ARRAY COLUMN DECODER POWER DOWN I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 Cypress Semiconductor Corporation • 198 Champion Court Document Number: 38-05130 Rev. O • San Jose, CA 95134-1709 • 408-943-2600 Revised November 17, 2015 1 page CY7C1019CV33 Capacitance Parameter [3] Description CIN COUT Input capacitance Output capacitance Thermal Resistance Parameter [3] Description JA Thermal resistance (junction to ambient) JC Thermal resistance (junction to case) Test Conditions TA = 25 °C, f = 1 MHz, VCC = 5.0 V Max Unit 8 pF 8 pF Test Conditions 32-pin TSOP II Unit Still air, soldered on a 3 × 4.5 inch, four-layer printed circuit board 68.61 C/W 20.59 C/W AC Test Loads and Waveforms Figure 2. AC Test Loads and Waveforms [4] 3.3 V OUTPUT 30 pF R 317 3.0 V R2 GND 351 ALL INPUT PULSES 90% 90% 10% 10% High-Z characteristics: 3.3 V R 317 OUTPUT 5 pF Rise Time: 1 V/ns (b) Fall Time: 1 V/ns (a) (c) R2 351  Notes 3. Tested initially and after any design or process changes that may affect these parameters. 4. AC characteristics (except High Z) for all speeds are tested using the Thevenin load shown in section (a) in Figure 2. High Z characteristics are tested for all speeds using the test load shown in section (c) in Figure 2. Document Number: 38-05130 Rev. O Page 5 of 14 5 Page Acronyms Acronym Description CMOS Complementary Metal Oxide Semiconductor CE Chip Enable I/O Input/Output OE Output Enable SRAM Static Random Access Memory TSOP Thin Small Outline Package TTL Transistor-Transistor Logic WE Write Enable CY7C1019CV33 Document Conventions Units of Measure Symbol °C MHz µA mA mm ms ns % pF V W Unit of Measure degree Celsius megahertz microampere milliampere millimeter millisecond nanosecond percent picofarad volt watt Document Number: 38-05130 Rev. *O Page 11 of 14 11 Page

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