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PDF DMC2990UDJQ Data sheet ( Hoja de datos )
| Número de pieza | DMC2990UDJQ | |
| Descripción | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DMC2990UDJQ
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device BVDSS
Q1 20V
Q2 -20V
RDS(ON) Max
0.99Ω @ VGS = 4.5V
1.2Ω @ VGS = 2.5V
1.8Ω @ VGS = 1.8V
2.4Ω @ VGS = 1.5V
1.9Ω @ VGS = -4.5V
2.4Ω @ VGS = -2.5V
3.4Ω @ VGS = -1.8V
5Ω @ VGS = -1.5V
ID Max
TA = +25°C
450mA
400mA
330mA
300mA
-310mA
-280mA
-240mA
-180mA
Features and Benefits
Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V Max
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surface Mount Package 1mm x 1mm
Low Package Profile, 0.45mm Maximum Package Height
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
Mechanical Data
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
Case: SOT963
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.027 grams (Approximate)
SOT963
D1 G2 S2
ESD PROTECTED
Top View
S1 G1 D2
Top View
Schematic and
Transistor Diagram
Ordering Information (Note 5)
Notes:
Part Number
Case
Packaging
DMC2990UDJQ-7
SOT963
10K/Tape & Reel
DMC2990UDJQ-7B
SOT963
10K/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D1 D1 = Product Type Marking Code
DMC2990UDJQ
Document number: DS39168 Rev. 1 - 2
1 of 9
www.diodes.com
September 2016
© Diodes Incorporated
1 page  
Typical Characteristics - N-CHANNEL (Cont.)
1.2
1.0
DMC2990UDJQ
1.0
0.8 ID = 1mA
0.6 ID = 250礎A
0.4
0.2
0.8
0.6 TA= 25癈°C
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE(C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
50
f = 1MHz
0
0 0.2 0.4
0.6 0.8 1.0 1.2
VSD, SOURCE- DRAIN VOLTAGE (V)
Fig. 8 Diodes Forward Voltage vs. Current
1,000
40
30
Ciss
20
10
Coss
NT()nA 100
RE
R
U
C
GE
AKA 10
LE
,S
S
ID
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
0 Crss
0 5 10 15 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
1
2 4 6 8 10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
8
6
4
2
VDS = 10V
0
0 0.2 0.4 0.6 0.8
QGQg- ((nnCC))
Fig. 11 Gate Charge Characteristics
DMC2990UDJQ
Document number: DS39168 Rev. 1 - 2
1
RDS(ON)
Limited
)A
NT( 0.1
RE
R
U
C
N
RAI
D
,
I
D
0.01
DC
PW = 10s
PW = 1s
PW= 100ms
PW= 10ms
PW= 1ms
TJ(MAX) = 150°C
TA = 25°C
Single Pulse
PW = 100µs
PW= 10µs
0.001
1 0.1
5 of 9
www.diodes.com
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
100
September 2016
© Diodes Incorporated
5 Page | ||
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