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PDF C3M0280090J Data sheet ( Hoja de datos )

Número de pieza C3M0280090J
Descripción Silicon Carbide Power MOSFET
Fabricantes Cree 
Logotipo Cree Logotipo



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No Preview Available ! C3M0280090J Hoja de datos, Descripción, Manual

VDS 900 V
C3M0280090J
ID @ 25˚C
11 A
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
RDS(on) 280 m
N-Channel Enhancement Mode
Features
Package
New C3M SiC MOSFET technology
High blocking voltage with low On-resistance
High speed switching with low capacitances
New low impedance package with driver source
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
TAB
Drain
Benefits
Higher system efficiency
Reduced cooling requirements
Increased power density
Increased system switching frequency
1 2 34 5 6 7
G KS S S S S S
Drain
(TAB)
Applications
Renewable energy
Lighting
High voltage DC/DC converters
Telecom Power Supplies
Induction Heating
Gate
(Pin 1)
Driver
Source
(Pin 2)
Power
Source
(Pin 3,4,5,6,7)
Part Number
Package
C3M0280090J
7L D2PAK
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
ID Continuous Drain Current
900
-8/+18
-4/+15
11
7
ID(pulse) Pulsed Drain Current
22
PD Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Note (1): MOSFET can also safely operate at 0/+15 V
50
-55 to
+150
260
Unit Test Conditions
V VGS = 0 V, ID = 100 μA
V Absolute maximum values
V Recommended operational values
A VGS = 15 V, TC = 25˚C
VGS = 15 V, TC = 100˚C
A Pulse width tP limited by Tjmax
W TC=25˚C, TJ = 150 ˚C
˚C
˚C 1.6mm (0.063”) from case for 10s
Note
Note (1)
Fig. 19
Fig. 22
Fig. 20
1 C3M0280090J Rev. - , 12-2015

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C3M0280090J pdf
Typical Performance
-6 -5 -4
-3
VGS = 0 V
VGS = 5 V
-2 -1 0
0
-5
VGS = 10 V
VGS = 15 V
-10
Drain-Source Voltage VDS (V)
Conditions:
TJ = -55 °C
tp < 200 µs
-15
-20
Figure 13. 3rd Quadrant Characteristic at -55 ºC
-6 -5 -4 -3 -2 -1 0
0
VGS = 0 V
VGS = 5 V
VGS = 10 V
VGS = 15 V
-5
-10
Drain-Source Voltage VDS (V)
Conditions:
TJ = 150 °C
tp < 200 µs
-15
-20
Figure 15. 3rd Quadrant Characteristic at 150 ºC
1000
100
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
Ciss
Coss
10
Crss
1
0 50 100 150
Drain-Source Voltage, VDS (V)
Figure 17. Capacitances vs. Drain-Source
Voltage (0 - 200V)
200
-6 -5 -4 -3 -2 -1 0
0
VGS = 0 V
VGS = 5 V
VGS = 10 V
VGS = 15 V
-5
-10
Drain-Source Voltage VDS (V)
Conditions:
TJ = 25 °C
tp < 200 µs
-15
-20
Figure 14. 3rd Quadrant Characteristic at 25 ºC
10
8
6
4
2
0
0 100 200 300 400 500 600 700 800 900 1000
Drain to Source Voltage, VDS (V)
Figure 16. Output Capacitor Stored Energy
1000
100
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
Ciss
Coss
10
Crss
1
0 100 200 300 400 500 600 700 800 900
Drain-Source Voltage, VDS (V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 900V)
5 C3M0280090J Rev. - , 12-2015

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