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PDF GBU8J Data sheet ( Hoja de datos )

Número de pieza GBU8J
Descripción Single Phase Glass Passivated Silicon Bridge Rectifier
Fabricantes GeneSiC 
Logotipo GeneSiC Logotipo



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No Preview Available ! GBU8J Hoja de datos, Descripción, Manual

GBU8J thru GBU8M
Single Phase Glass Passivated Silicon
Bridge Rectifier
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• High case dielectric strength of 1500 VRMS
• Glass passivated chip junction
• Ideal for printed circuit boards
• High surge overload rating
• High temperature soldering guaranteed: 260⁰C/ 10
seconds, 0.375 (9.5mm) lead length
• Not ESD Sensitive
Mechanical Data
Case: Molded plastic body over passivated junctions
Terminals: Plated leads, solderable per MIL-STD-750 Method 2026.
Mounting position: Any
Maximum ratings at Tc = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
GBU8J
600
420
600
-55 to 150
-55 to 150
Electrical characteristics at Tc = 25 °C, unless otherwise specified
Single phase, half sine wave, 60 Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Parameter
Symbol
Conditions
GBU8J
Maximum average forward rectified
current 1,2
Peak forward surge current
Maximum instantaneous forward
voltage drop per leg
Maximum DC reverse current at
rated DC blocking voltage per leg
Rating for fusing
Typical junction capacitance per leg
3
IO
IFSM
VF
IR
I2t
Cj
Tc = 100 °C
tp = 8.3 ms, half sine
IF = 8 A
Ta = 25 °C
Ta = 125 °C
t < 8.3 ms
8.0
200
1.1
5
500
166
94
Typical thermal resistance per leg 1,2
RΘJA
RΘJL
21
2.2
1 - Device mounted on 82 mm x 82 mm x 3 mm Al plate heatsink
2 - Recommended mounted position is to bolt down device on a heatsink with silicon thermal
compond for maximum heat transfer using #6 screw.
3 - Measured at 1.0 MHz and applied reverse bias of 4.0 V
VRRM = 600 V -1000 V
IO = 8 A
GBU Package
GBU8K
800
560
800
-55 to 150
-55 to 150
GBU8M
1000
700
1000
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
GBU8K
8.0
200
1.1
5
500
166
94
21
2.2
GBU8M
8.0
200
1.1
5
500
166
94
21
2.2
Unit
A
A
V
μA
A2sec
pF
°C/W
Apr 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/
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