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PDF ADM213E Data sheet ( Hoja de datos )

Número de pieza ADM213E
Descripción RS-232 Line Drivers/Receivers
Fabricantes Analog Devices 
Logotipo Analog Devices Logotipo



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No Preview Available ! ADM213E Hoja de datos, Descripción, Manual

EMI/EMC-Compliant, ±15 kV ESD­Protected,
RS-232 Line Drivers/Receivers
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
FEATURES
Complies with 89/336/EEC EMC directive
ESD protection to IEC 1000-4-2 (801-2)
Contact discharge: ±8 kV
Air-gap discharge: ±15 kV
Human body model: ±15 kV
EFT/burst immunity (IEC 1000-4-4)
Low EMI emissions (EN 55022)
Eliminates need for TransZorb® suppressors
230 kbps data rate guaranteed
Single 5 V power supply
Shutdown mode 1 μW
Plug-in upgrade for MAX2xxE
Space saving TSSOP package available
APPLICATIONS
Laptop computers
Notebook computers
Printers
Peripherals
Modems
GENERAL DESCRIPTION
The ADM2xxE is a family of robust RS-232 and V.28 interface
devices that operate from a single 5 V power supply. These pro-
ducts are suitable for operation in harsh electrical environments
and are compliant with the EU directive on electromagnetic
compatibility (EMC) (89/336/EEC). The level of emissions and
immunity are both in compliance. EM immunity includes ESD
protection in excess of ±15 kV on all I/O lines (IEC 1000-4-2),
fast transient burst protection (IEC 1000­4­4), and radiated
immunity (IEC 1000-4-3). EM emissions include radiated and
conducted emissions as required by Information Technology
Equipment EN 55022, CISPR 22.
All devices fully conform to the EIA-232-E and CCITT V.28
specifications and operate at data rates up to 230 kbps. Shut-
down and enable control pins are provided on some of the
products (see Table 1).
The shutdown function on the ADM211E disables the charge
pump and all transmitters and receivers. On the ADM213E the
CONNECTION DIAGRAM
5V INPUT
0.1µF+
10V
0.1µF+
10V
12 C1+
14 C1–
+5V TO +10V
VOLTAGE
DOUBLER
VCC 11
V+ 13
15 C2+ +10V TO –10V
VOLTAGE
16 C2– INVERTER
V– 17
+
0.1µF
6.3V
+
0.1µF
0.1µF
+ 10V
T1IN
TTL/CMOS
INPUTS1
T2IN
T3IN
T4IN
R1OUT
R2OUT
TTL/CMOS
OUTPUTS
R3OUT
R4OUT
R5OUT
EN (ADM211E)
EN (ADM213E)
7
6
20
21
8
5
26
22
19
24
T1 2
T2 3
T3 1
T4 28
R1 9
R2 4
R3 27
R4 23
R5 18
ADM211E/ 25
GND ADM213E
10
T1OUT
T2OUT
T3OUT
RS-232
OUTPUTS
T4OUT
R1IN
R2IN
R3IN
RS-232
INPUTS2
R4IN
R5IN
SHDN (ADM211E)
SHDN (ADM213E)
1 INTERNAL 400kPULL-UP RESISTOR ON EACH TTL/CMOS INPUT.
2 INTERNAL 5kPULL-DOWN RESISTOR ON EACH RS-232 INPUT.
Figure 1.
charge pump, all transmitters, and three of the five receivers are
disabled. The remaining two receivers remain active, thereby
allowing monitoring of peripheral devices. This feature allows
the device to be shut down until a peripheral device begins
communication. The active receivers can alert the processor,
which can then take the ADM213E out of the shutdown mode.
Operating from a single 5 V supply, four external 0.1 μF
capacitors are required.
The ADM207E and ADM208E are available in 24-lead PDIP, SSOP,
available in 28-lead SSOP, TSSOP, and SOIC_W packages. All
products are backward compatible with earlier ADM2xx products,
facilitating easy upgrading of older designs.
Table 1. Selection Table
Model
Supply Voltage
ADM206E 5 V
ADM207E 5 V
ADM208E 5 V
ADM211E 5 V
ADM213E 5 V
1 Two receivers active.
Drivers
4
5
4
4
4
Receivers
3
3
4
5
5
ESD Protection
±15 kV
±15 kV
±15 kV
±15 kV
±15 kV
Shutdown
Yes
No
No
Yes
Yes (SHDN)1
Enable
Yes
No
No
Yes
Yes (EN)
Packages
RW-24
N-24-1, RW-24, RS-24, RU-24
N-24-1, RW-24, RS-24, RU-24
RW-28, RS-28, RU-28
RW-28, RS-28, RU-28
Rev. E
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
©2006 Analog Devices, Inc. All rights reserved.

1 page




ADM213E pdf
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
T3OUT 1
24 T4OUT
T1OUT 2
23 R2IN
T2OUT 3
22 R2OUT
R1IN 4
21 SHDN
R1OUT
T2IN
T1IN
5 ADM206E 20 EN
6 TOP VIEW 19 T4IN
7 (Not to Scale) 18 T3IN
GND 8
17 R3OUT
VCC 9
16 R3IN
C1+ 10
15 V–
V+ 11
14 C2–
C1– 12
13 C2+
Figure 2. ADM206E Pin Configuration
0.1µF+
6.3V
0.1µF+
16V
5V INPUT
10 C1+
12 C1–
+5V TO +10V
VOLTAGE
DOUBLER
VCC 9
V+ 11
13 C2+ +10V TO –10V
VOLTAGE
14 C2– INVERTER
V– 15
+
0.1µF
6.3V
0.1µF
+ 16V
+
0.1µF
T1IN
TTL/CMOS
INPUTS1
T2IN
T3IN
T4IN
R1OUT
TTL/CMOS
OUTPUTS
R2OUT
R3OUT
EN
7
6
18
19
5
22
17
20
T1 2
T2 3
T3 1
T4
R1
24
4
R2 23
R3 16
GND ADM206E 21
8
T1OUT
T2OUT
T3OUT
RS-232
OUTPUTS
T4OUT
R1IN
R2IN
RS-232
INPUTS2
R3IN
SHDN
T3OUT 1
24 T4OUT
T1OUT 2
23 R2IN
T2OUT 3
22 R2OUT
R1IN 4
21 T5IN
R1OUT
T2IN
T1IN
5 ADM207E 20 T5OUT
6 TOP VIEW 19 T4IN
7 (Not to Scale) 18 T3IN
GND 8
17 R3OUT
VCC 9
16 R3IN
C1+ 10
15 V–
V+ 11
14 C2–
C1– 12
13 C2+
Figure 4. ADM207E Pin Configuration
5V INPUT
0.1µF+
10V
0.1µF+
10V
10 C1+
12 C1–
+5V TO +10V
VOLTAGE
DOUBLER
VCC 9
V+ 11
13 C2+ +10V TO –10V
VOLTAGE
14 C2– INVERTER
V– 15
0.1µF
+ 6.3V
+
0.1µF
0.1µF
+ 10V
T1IN
T2IN
TTL/CMOS
INPUTS1
T3IN
T4IN
T5IN
R1OUT
TTL/CMOS
OUTPUTS
R2OUT
R3OUT
7
6
18
19
21
5
22
17
T1 2
T2 3
T3 1
T4 24
T5 20
R1 4
R2 23
R3 16
GND ADM207E
8
T1OUT
T2OUT
T3OUT
RS-232
OUTPUTS
T4OUT
T5OUT
R1IN
R2IN
RS-232
INPUTS2
R3IN
1 INTERNAL 400kPULL-UP RESISTOR ON EACH TTL/CMOS INPUT.
2 INTERNAL 5kPULL-DOWN RESISTOR ON EACH RS-232 INPUT.
Figure 3. ADM206E Typical Operating Circuit
1 INTERNAL 400kPULL-UP RESISTOR ON EACH TTL/CMOS INPUT.
2 INTERNAL 5kPULL-DOWN RESISTOR ON EACH RS-232 INPUT.
Figure 5. ADM207E Typical Operating Circuit
Rev. E | Page 5 of 20

5 Page





ADM213E arduino
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
On the ADM213E, Receiver R4 and Receiver R5 remain
enabled in shutdown. Note that the transmitters are disabled
but are not tristated in shutdown; it is not permitted to connect
multiple (RS-232) driver outputs together.
The shutdown feature is very useful in battery-operated systems
since it reduces the power consumption to 1 μW. During
shutdown, the charge pump is also disabled. The shutdown
control input is active high on the ADM211E, and it is active
low on the ADM213E. When exiting shutdown, the charge
pump is restarted, and it takes approximately 100 μs for it to
reach its steady state operating condition.
HIGH BAUD RATE
The ADM2xxE feature high slew rates, permitting data
transmission rates well in excess of the EIA-232-E
specifications. RS-232 levels are maintained at data rates up to
230 kbps, even under worst-case loading conditions. This
allows for high speed data links between two terminals, making
it suitable for the new generation modem standards that require
data rates of 200 kbps. The slew rate is controlled internally to
less than 30 V/μs to minimize EMI interference.
3V
EN INPUT
0V
VOH
RECEIVER
OUTPUT
VOL
tDR
VOH –0.1V
VOL +0.1V
NOTES
1. EN IS THE COMPLEMENT OF EN FOR THE ADM213E.
Figure 22. Receiver Disable Timing
3V
EN INPUT
0V
RECEIVER
OUTPUT
tER
+3.5V
+0.8V
NOTES
1. EN IS THE COMPLEMENT OF EN FOR THE ADM213E.
Figure 23. Receiver Enable Timing
ESD/EFT TRANSIENT PROTECTION SCHEME
The ADM2xxE use protective clamping structures on all inputs
and outputs that clamp the voltage to a safe level and dissipate
the energy present in ESD (electrostatic) and EFT (electrical
fast transient) discharges. A simplified schematic of the
protection structure is shown in Figure 24 and Figure 25. Each
input and output contains two back-to-back high speed
clamping diodes. During normal operation, with maximum
RS­232 signal levels, the diodes have no effect because one or
the other is reverse biased, depending on the polarity of the
signal. If, however, the voltage exceeds about ±50 V, reverse
breakdown occurs, and the voltage is clamped at this level. The
diodes are large p-n junctions designed to handle the
instantaneous current surges that can exceed several amperes.
The transmitter outputs and receiver inputs have a similar
protection structure. The receiver inputs can also dissipate some
of the energy through the internal 5 kΩ resistor to GND as well
as through the protection diodes.
The protection structure achieves ESD protection up to
±15 kV and EFT protection up to ±2 kV on all RS-232 I/O
lines. The methods used to test the protection scheme are
discussed in the ESD Testing (IEC 1000­4­2) and EFT/Burst
Testing (IEC 1000­4­4) sections.
RECEIVER
INPUT
R1
RX
D1
RIN
D2
Figure 24. Receiver Input Protection Scheme
TOUT
RX
D1
D2
TRANSMITTER
OUTPUT
Figure 25. Transmitter Output Protection Scheme
ESD TESTING (IEC 1000-4-2)
IEC 1000-4-2 (previously IEC 801-2) specifies compliance
testing using two coupling methods, contact discharge and air-
gap discharge. Contact discharge calls for a direct connection to
the unit being tested. Air-gap discharge uses a higher test voltage
but does not make direct contact with the unit under test. With
air-gap discharge, the discharge gun is moved toward the unit
under test, developing an arc across the air gap. This method is
influenced by humidity, temperature, barometric pressure,
distance, and rate of closure of the discharge gun. The contact
discharge method, while less realistic, is more repeatable and is
gaining acceptance in preference to the air-gap method.
Although very little energy is contained within an ESD pulse,
the extremely fast rise time, coupled with high voltages, can
cause failures in unprotected semiconductors. Catastrophic
Rev. E | Page 11 of 20

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