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PDF BUT11A Data sheet ( Hoja de datos )

Número de pieza BUT11A
Descripción High Voltage Fast-switching NPN Power Transistor
Fabricantes nELL 
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No Preview Available ! BUT11A Hoja de datos, Descripción, Manual

SEMICONDUCTOR
BUT11A Series RRooHHSS
Nell High Power Products
High Voltage Fast-switching NPN Power Transistor
5A/450V
FEATURES
High voltage capability
Fast switching speed
TO-220AB package which can be
installed to the heat sink with one screw
APPLICATIONS
Flyback and forward single transistor
low power converters
Inverters
Converters
Switching regulators
Motor control systems
C
B
CE
TO-220AB
(BUT11A)
C (2)
B
(1) NPN
E(3)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VCES
Collector to emitter voltage
VBE=0
VCEO
Collector to emitter voltage
IB=0
VEBO
Emitter to base voltage
IC=0
IC Collector current-continuous
ICM Peak collector current
tp<5 ms
IB Base Current
IBM Peak base current
PD Collector power dissipation
tp<5ms
Ta=25°C
TJ Junction temperature
TSTG
Storage temperature
VALUE
1000
450
9
5
10
2
4
100
150
-65 to 150
UNIT
V
A
W
°C
THERMAL CHARACTERISTICS (TC = 25°C)
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
VALUE
1.5
UNIT
ºC/W
www.nellsemi.com
Page 1 of 6

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BUT11A pdf
SEMICONDUCTOR
BUT11A Series RRooHHSS
Nell High Power Products
Fig.10 Test circuit resistive load
VIM
0
tp
T
VCC
RL
RB
D.U.T.
VCC = 250V; tp = 20µs; VIM = -6 to +8V; tp/T = 0.01.
The values of RB and RL are selected in accordance with IC(ON) and
IB(ON) requirements
Fig.11 Switching time waveforms with
resistive load
90%
IB
10%
tr ≤ 30ns
90%
IC
10%
t on
IB (on)
t
IB (off)
IC (on)
tf
tstg
t
Fig.12 Test circuit inductive load
+IB
VEB
VCC
LC
LB
D.U.T.
VCC = 300V; VEB = 5V; LB = 1µH
Fig.13 Switching time waveforms with
inductive load
90%
IB
10%
tr
90%
IC
10%
IB (on)
t
-IB (off)
IC (on)
tf
tstg
toff
t
www.nellsemi.com
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