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PDF NCP81158 Data sheet ( Hoja de datos )

Número de pieza NCP81158
Descripción Synchronous Buck MOSFET Driver
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No Preview Available ! NCP81158 Hoja de datos, Descripción, Manual

NCP81158
Synchronous Buck MOSFET
Driver
The NCP81158 is a high−performance dual MOSFET gate driver in
a small 3 mm x 3 mm package, optimized to drive the gates of both
high−side and low−side power MOSFETs in a synchronous buck
converter. The driver outputs can be placed into a high−impedance
state via the tri−state PWM and EN inputs. The NCP81158 comes
packaged with an integrated boost diode to minimize external
components. A VCC UVLO function guarantees the outputs are low
when the supply voltage is low.
Features
Space−efficient 3 mm x 3 mm DFN8 thermally−enhanced Package
VCC Range of 4.5 V to 5.5 V
Internal Bootstrap Diode
5 V 3−stage PWM Input
Diode Braking Capability via EN Mid−state
Adaptive Anti−cross Conduction Circuit Protects Against
Cross−conduction during FET Turn−on and Turn−off
Output Disable Control Turns Off Both MOSFETs via Enable Pin
VCC Undervoltage Lockout
These Devices are Pb−free, Halogen−free/BFR−free and are RoHS
Compliant
Typical Applications
Power Solutions for Notebook and Desktop Systems
www.onsemi.com
1
DFN8
CASE 506BJ
MARKING
DIAGRAM
18
81158
ALYWG
G
81158
A
L
Y
W
G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
PINOUT DIAGRAM
BST 1
PWM 2
EN 3
VCC 4
FLAG
9
8 DRVH
7 SW
6 GND
5 DRVL
ORDERING INFORMATION
Device
Package
Shipping
NCP81158MNTXG DFN8
3000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 0
1
Publication Order Number:
NCP81158/D

1 page




NCP81158 pdf
NCP81158
NCP81158 ELECTRICAL CHARACTERISTICS (−40°C < TA < +100°C; 4.5 V < VCC < 5.5 V, 4.5 V < BST−SWN < 5.5 V,
4.5 V < BST < 30 V, 0 V < SWN < 21 V, unless otherwise noted)
Parameter
Test Conditions
Min Typ Max Unit
PWM INPUT
PWM Input High
3.4 V
PWM Mid−State
1.3 2.7 V
PWM Input Low
0.7 V
ZCD Blanking Timer
350 ns
HIGH SIDE DRIVER
Output Impedance, Sourcing Current
Output Impedance, Sinking Current
DRVH Rise Time trDRVH
DRVH Fall Time tfDRVH
DRVH Turn−Off Propagation Delay tpdlDRVH
DRVH Turn−On Propagation Delay tpdhDRVH
SW Pulldown Resistance
VBST−VSW = 5 V
VBST−VSW = 5 V
VCC = 5 V, 3 nF load, VBST−VSW = 5 V
VCC = 5 V, 3 nF load, VBST−VSW =5 V
CLOAD = 3 nF
CLOAD = 3 nF
SW to PGND
0.9 1.7
0.7 1.7
16 25
11 18
10 30
10 40
45
W
W
ns
ns
ns
ns
kW
DRVH Pulldown Resistance
DRVH to SW, BST−SW = 0 V
45 kW
LOW SIDE DRIVER
Output Impedance, Sourcing Current
0.9 1.7
W
Output Impedance, Sinking Current
0.4 0.8
W
DRVL Rise Time trDRVL
DRVL Fall Time tfDRVL
DRVL Turn−Off Propagation Delay tpdlDRVL
DRVL Turn−On Propagation Delay tpdhDRVL
DRVL Pulldown Resistance
EN INPUT
CLOAD = 3 nF
CLOAD = 3 nF
CLOAD = 3 nF
CLOAD = 3 nF
DRVL to PGND, VCC = PGND
16 25
11 15
10 30
5.0 25
45
ns
ns
ns
ns
kW
Input Voltage High
3.3 V
Input Voltage Mid
1.35 1.8 V
Input Voltage Low
0.6 V
Input bias current
−1.0 1.0 mA
Propagation Delay Time
20 40
ns
SW NODE
SW Node Leakage Current
20 mA
Zero Cross Detection Threshold Voltage
−6.0 mV
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Table 1. DECODER TRUTH TABLE
Input
PWM High (Enable High)
PWM Mid (Enable High)
PWM Mid (Enable High)
PWM Low (Enable High)
Enable at Mid
ZCD
ZCD Reset
Positive Current Through the Inductor
Zero Current Through the Inductor
ZCD Reset
X
DRVL
Low
High
Low
High
Low
DRVH
High
Low
Low
Low
Low
www.onsemi.com
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