PDF NCP81155 Data sheet ( Hoja de datos )

Número de pieza	NCP81155
Descripción	MOSFET Driver
Fabricantes	ON Semiconductor
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No Preview Available ! NCP81155 Product Preview MOSFET Driver The NCP81155 is a high−performance dual MOSFET gate driver in a small 3 mm x 3 mm package, optimized to drive the gates of both high−side and low−side power MOSFETs in a buck or buck−boost application. VCC UVLO ensures the MOSFETs are off when supply voltages are low. A bi−directional Enable pin provides a fault signal to the controller when a UVLO fault is detected. Features • Space−Efficient 3 mm x 3 mm DFN8 Thermally−Enhanced Package • VCC Range of 4.5 V to 13.2 V • Integrated Bootstrap Diode • Compatible with 3.3 V and 5 V PWM Inputs • Bi−Directional Enable Feature Pulls Enable Pin low during a UVLO Fault. • Adaptive Anti−Cross Conduction Circuit Protects against Cross−Conduction during FET Turn−on and Turn−off • Output Disable Control Turns Off Both MOSFETs • VCC Undervoltage Lockout • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • E−Cigarettes • Unmanned Aerial Vehicles (UAV) www.onsemi.com 1 DFN8 MN SUFFIX CASE 506BJ MARKING DIAGRAM 1 81155 ALYWG G 81155 A L Y W G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS BST 1 8 DRVH PWM 2 EN 3 FLAG 9 7 SW 6 GND VCC 4 5 DRVL (Top View) This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. ORDERING INFORMATION Device Package Shipping† NCP81155MNTWG DFN8 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 February, 2016 − Rev. P0 1 Publication Order Number: NCP81155/D 1 page NCP81155 Table 5. ELECTRICAL CHARACTERISTICS (Unless otherwise stated: −10°C < TA < +125°C; 4.5 V < VCC < 13.2 V, 4.5 V < BST−SWN < 13.2 V, 4.5 V < BST < 30 V, 0 V < SWN < 21 V) Parameter Test Conditions Min. Typ. Max. LOW SIDE DRIVER (VCC = 12 V) DRVL Turn−Off Propagation Delay tpdlDRVL DRVL Turn−On Propagation Delay tpdhDRVL DRVL Pull Down Resistance CLOAD = 3 nF CLOAD = 3 nF DRVL to PGND, VCC = PGND 15 TBD 8.0 30 37.5 LOW SIDE DRIVER (VCC = 5 V) Output Impedance, Sourcing Current 2.5 Output Impedance, Sinking Current 1.0 DRVL Rise Time trDRVL DRVL Fall Time tfDRVL DRVL Turn−Off Propagation Delay tpdlDRVL DRVL Turn−On Propagation Delay tpdhDRVL DRVL Pull Down Resistance CLOAD = 3 nF CLOAD = 3 nF CLOAD = 3 nF CLOAD = 3 nF DRVL to PGND, VCC = PGND 30 22 TBD 12 37.5 EN INPUT Input Voltage High 2.0 Input Voltage Low 1.0 Hysteresis 500 Normal Mode Bias Current −1 1 Enable Pin Sink Current 4 30 Propagation Delay Time PWM = 0 V, EN going from 0 V to ENHI to DRVL rising to 10% 20 40 SW Node SW Node Leakage Current TBD Units ns ns kW W W ns ns ns ns kW V V mV mA mA ns mA www.onsemi.com 5 5 Page

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