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PDF TIP31B Data sheet ( Hoja de datos )
| Número de pieza | TIP31B | |
| Descripción | SILICON NPN POWER TRANSISTORS | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TIP31B (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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TIP31
TIP31A
TIP31B
TIP31C
SILICON
NPN POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR TIP31 series devices
are silicon NPN epitaxial-base power transistors designed
for power amplifier and high speed switching applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL TIP31
Collector-Base Voltage
VCBO 40
Collector-Emitter Voltage
VCEO 40
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Continuous Base Current
IB
Power Dissipation
PD
Power Dissipation (TA=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
ΘJA
Thermal Resistance
ΘJC
TIP31A TIP31B TIP31C
60 80 100
60 80 100
5.0
3.0
5.0
1.0
40
2.0
-65 to +150
62.5
3.13
UNITS
V
V
V
A
A
A
W
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
ICEO
VCE=30V (TIP31, TIP31A)
ICEO
VCE=60V (TIP31B, TIP31C)
ICES
VCE=Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=30mA (TIP31)
40
BVCEO
IC=30mA (TIP31A)
60
BVCEO
IC=30mA (TIP31B)
80
BVCEO
IC=30mA (TIP31C)
100
VCE(SAT) IC=3.0A, IB=375mA
VBE(ON)
VCE=4.0V, IC=3.0A
hFE VCE=4.0V, IC=1.0A
25
hFE VCE=4.0V, IC=3.0A
10
hfe VCE=10V, IC=0.5A, f=1.0kHz
20
fT
VCE=10V, IC=0.5A, f=1.0MHz
3.0
ton IC=1.0A, IB1=IB2=0.1A, RL=30Ω
0.3
toff IC=1.0A, IB1=IB2=0.1A, RL=30Ω
1.0
MAX
0.3
0.3
0.2
1.0
1.2
1.8
50
UNITS
mA
mA
mA
mA
V
V
V
V
V
V
MHz
μs
μs
R0 (12-June 2014)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet TIP31B.PDF ] | |
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