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PDF TIP29B Data sheet ( Hoja de datos )
| Número de pieza | TIP29B | |
| Descripción | NPN EPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | Samsung | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TIP29B (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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TIP29 SERIES
(TIP29/29A/29B/29C)
NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LINEAR
SWITCHING APPLICATIONS
• Complementary to TIP30/30A/30B/30C
ABSOLUTE MAXIMUM RATINGS
Characteristic
Symbol
Collector Emitter Voltage
Collector Emitter Voltage
: TIP29
: TIP29A
: TIP29B
: TIP29C
: TIP29
: TIP29A
: TIP29B
: TIP29C
VCBO
VCEO
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
&Collector Dissipation ( TC=25 )
&Collector Dissipation ( TA=25 )
Junction Temperature
Storage Temperature
VEBO
IC
IC
IB
PC
PC
TJ
TSTG
Rating
40
60
80
100
40
60
80
100
5
1
3
0.4
30
2
150
-65 ~ 150
Unit
V
V
V
V
V
V
V
V
V
A
A
A
W
W
&
&
&ELECTRICA CHARACTERISTICS (TC =25 )
TO-220
1.Base 2.Collector 3.Emitter
Characteristic
*Collector Emitter Sustaining Voltage : TIP29
: TIP29A
: TIP29B
: TIP29C
Collector Cutoff Current
: TIP29/29A
: TIP29B/29C
Collector Cutoff Current
: TIP29
: TIP29A
: TIP29B
: TIP29C
Emitter Cutoff Current
*DC Current Gain
*Collector Emitter Saturation Voltage
*Base Emitter Saturation Voltage
Current Gain Bandwidth Product
I * Pulse Test : PW 300 , Duty Cycle 2%
Symbol
Test Conditions
BVCEO(sus) IC = 30mA, IB = 0
ICEO
ICES
IEBO
hFE
VCE(sat)
VBE(on)
fT
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VCE = 40V, VEB = 0
VCE = 60V, VEB = 0
VCE = 80V, VEB = 0
VCE = 100V, VEB = 0
VEB = 5V, IC = 0
VCE = 4V, IC = 0.2A
VCE = 4V, IC = 1A
IC = 1A, IB = 125mA
VCE = 4V, IC = 1A
VCE = 10V, IC = 200mA
f = 1MHz
Min Max Unit
40 V
60 V
80 V
100 V
0.3 mA
0.3 mA
200 uA
200 uA
200 uA
200 uA
1.0 mA
40
15 75
0.7 V
1.3 V
3.0 MHz
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet TIP29B.PDF ] | |
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