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PDF BD679A Data sheet ( Hoja de datos )
| Número de pieza | BD679A | |
| Descripción | NPN Epitaxial Planar Transistor | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BD679A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BD679A
Spec. No. : C652T3-M
Issued Date : 2006.05.24
Revised Date : 2015.12.30
Page No. : 1/6
Description
The BD679A is a NPN Darlington transistor, designed for general purpose amplifier and low speed
switching application.
Features:
High BVCEO
Low VCE(SAT)
High current gain
Monolithic construction with built-in base-emitter shunt resistors
Pb-free lead plating package
Equivalent Circuit
BD679A
B
C
R1≈8k R2≈120
B：Base
C：Collector
E：Emitter
E
Outline
TO-126
EC B
BD679A
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C652T3-M
Issued Date : 2006.05.24
Revised Date : 2015.12.30
Page No. : 5/6
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3C/second max.
3C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100C
150C
60-120 seconds
150C
200C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183C
60-150 seconds
217C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 C
260 +0/-5 C
Time within 5C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6C/second max.
6C/second max.
Time 25 C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BD679A
CYStek Product Specification
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BD679A.PDF ] | |
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