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PDF CJ3404 Data sheet ( Hoja de datos )
| Número de pieza | CJ3404 | |
| Descripción | MOSFETS | |
| Fabricantes | JCST | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CJ3404 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3404 N-Channel Enhancement Mode Field Effect Transistor
DESCRIPTION
The CJ3404 use advanced trench technology to provide excellent
RDS(ON) and low gate charge. This device is suitable for use as a load
switch or in PWM applications.The source leads are separated to allow a
Kelvin connection to the source,which may be used to bypass the source
inductance.
SOT-23
1. GATE
2. SOURCE
3. DRAIN
MARKING: R4
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-source voltage
VDS
Gate-source voltage
VGS
Continuous drain current (t ≤10s)
ID
Pulsed drain current *
IDM
Power dissipation
PD
Thermal resistance from junction to ambient
RθJA
Junction temperature
TJ
Storage temperature
Tstg
* Repetitive rating : Pulse width limited by maximum junction temperature.
Value
30
±20
5.8
30
0.35
357
150
-55~ 150
Unit
V
V
A
A
W
℃/W
℃
℃
A,Dec,2010
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet CJ3404.PDF ] | |
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