(PDF) CJ2310 Datasheet

Número de pieza	CJ2310
Descripción	MOSFETS
Fabricantes	JCST
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No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2310 N-Channel MOSFET DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. FEATURES  High power and current handing capability  Lead free product is acquired  Surface mount package APPLICATION  Battery Switch  DC/DC Converter MARKING: S10 Maximum ratings (Ta=25℃ unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (note 1) Power Dissipation Thermal Resistance from Junction to Ambient (note 2) Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD RθJA TJ TSTG Value 60 ±20 3 10 0.35 357 150 -55~+150 Unit V V A A W ℃/W ℃ ℃ C,Jun,2013 1 page

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PDF CJ2310 Data sheet ( Hoja de datos )