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PDF CJ303PL Data sheet ( Hoja de datos )
| Número de pieza | CJ303PL | |
| Descripción | PNP Transistor | |
| Fabricantes | ZPSEMI | |
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Hay una vista previa y un enlace de descarga de CJ303PL (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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CJ303PL
SOT-89-3L Plastic-Encapsulate Transistors
CJ303PL TRANSISTOR (PNP)
SOT-89-3L
FEATURES
z Small Flat Package
z High DC Current Gain
z Ultra Low Collector-Emitter Saturation Voltage
1. BASE
2. COLLECTOR
3. EMITTER
MARKING:303PL
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-50
-35
-5
-3
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICES
IEBO
hFE*
VCE(sat)*
VBE(sat)*
VBE*
Test conditions
IC= -0.1mA,IE=0
IC=-10mA,IB=0
IE=-0.1mA,IC=0
VCB=-35V,IE=0
VCES=-35V
VEB=-4V,IC=0
VCE=-1.5V, IC=-1A
VCE=-1.5V, IC=-1.5A
VCE=-3V, IC=-2A
IC=-0.8A,IB=-26mA
IC=-1.2A,IB=-40mA
IC=-2A,IB=-66.6mA
IC=-3A,IB=-100mA
IC=-1.2A,IB=-40mA
IC=-3A,IB=-100mA
VCE=-3V, IC=-2A
Min Typ Max Unit
-50 V
-35 V
-5 V
-100
nA
-100
nA
-100
nA
100
100 400
100
-0.15
V
-0.2 V
-0.25
V
-0.4 V
-1 V
-1.2 V
-1 V
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