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PDF 2SA1770 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1770 | |
| Descripción | Silicon PNP Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1770
DESCRIPTION
·High breakdown voltage and large current capacity
·Small and slim package permitting
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·Complementary to 2SC4614
APPLICATIONS
·High voltage switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous -1.5 A
ICM Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25℃
Collector Power Dissipation
@Ta=25℃
TJ Junction Temperature
-2.5 A
15
W
1.0
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SA1770.PDF ] | |
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