(PDF) 2SA1261-Z Datasheet - Silicon PNP Power Transistor

Número de pieza	2SA1261-Z
Descripción	Silicon PNP Power Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1261-Z DESCRIPTION ·High switching speed ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6V(Max)@ IC= -5A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SC3157 APPLICATIONS ·High speed high voltage switching industrial use ·DC/DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -20 A IB Base Current-Continuous -3.5 A PC Total Power Dissipation @ TC=25℃ 20 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark 1 page

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PDF 2SA1261-Z Data sheet ( Hoja de datos )