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PDF 2N6581 Data sheet ( Hoja de datos )
| Número de pieza | 2N6581 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6581
DESCRIPTION
·Excellent Safe Operating Area
·High Voltage,High Speed
·Low Saturation Voltage
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V(Min)
APPLICATIONS
·Off-line power supplies
·Switching amplifiers
·Inverters/Converters
·Motor speed control circuits
·Switching regulator
·Solenoid& relay drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
550 V
VCEO Collector-Emitter Voltage
450 V
VEBO
Emitter-Base Voltage
9.0 V
IC Collector Current-Continuous
10 A
ICM Collector Current-Peak
16 A
IB Base Current-Continuous
5A
PC Collector Power Dissipation@TC=25℃ 125
W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.4
UNIT
℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N6581.PDF ] | |
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